ФТП, 2007, том 41, выпуск 4

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Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique

V.V.Afrosimov, R.N.Il'in, V.I.Sakharov , I.T.Serenkov

Ioffe Physicotechnical Institute of Russian Academy of Sciences,
194021 St. Petersburg, Russia

(Получена 16 октября 2006 г. Принята к печати 30 октября 2006 г.)

The paper presents a short description of thin film parameter study technique based on the analysis of energy and angular spectra of ions, back scattered from the film, with initial energies in 50-250 keV range as well as on the registration of characteristic X-ray radiation induced in the film under study by the probing ion beam. The technique is nondestructive one and makes it possible to determine geometrical parameters of the film, element composition and its change with depth, crystal structure quality of the film as a whole and of sublattices of definite elements. Some examples are given on this technique application for the study of multicomponent film structures at different stages of their growth.

PACS: 61.18.Bn, 61.85.+p, 68.55.Jk, 68.55.Ln, 78.70.En, 82.80.Yc

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