ФТП, 2007, том 41, выпуск 4

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Cathodoluminescence study of silicon oxide/silicon interface

M.V.Zamoryanskaya, V.I.Sokolov

Ioffe Physicotechnical Institute, Russian Academy of Sciences,
194021 St. Petersburg, Russia

(Получена 12 сентября 2006 г. Принята к печати 3 октября 2006 г.)

In this paper the local cathodoluminescence method was used to study characteristics of SiO2/Si interface, a change of its properties during oxidation and an influence of the type of silicon conductivity on the properties of SiO2/Si interface. This research shows that the first phase of silicon oxidation is formation of amorphous silicon layers on the silicon surface and the appearance of silicon clusters in the natural silicon oxide. Cathodoluminescence gives a possibility for founding the presence of point defects in silicon oxide and silicon and for studying the distribution of such defects on the surface and at the depth.

PACS: 68.35.Dv, 78.60.Hk, 78.66.Db

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