ФТП, 2007, том 41, выпуск 4
ФТП, 2007, том 41, выпуск 4
| Содержание | Предыдущая статья | Следующая статья | Поиск |
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Initial stages of gold adsorption on silicon stepped surface at elevated temperatures
S.S.Kosolobov, Se AhnSong, E.E.Rodyakina, A.V.Latyshev
Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch,
630090 Novosibirsk, Russia
Samsung Advanced Institute of Technology,
440-600, POB 111 Suwon, Korea
(Получена 12 сентября 2006 г. Принята к печати 3 октября 2006 г.)
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Experimental study performed by ultrahigh vacuum reflection electron microscopy and atomic force microscopy reveals step instability on Si (111) surface during gold deposition at elevated temperatures (higher than C). Our results show that transformations of regular atomic steps into the system of step bunches and vice versa depend on the gold coverage and direction of the electrical current heating the sample. The mechanism and conditions of the surface morphology transformations are discussed. PACS: 61.72.Ji, 68.35.Fx, 68.37.-d |
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