ФТП, 2007, том 41, выпуск 4

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EBIC measurements of small diffusion length
in semiconductor structures

E.B.Yakimov , S.S.Borisov *, S.I.Zaitsev

Institute of Microelectronics Technology, Russian Academy of Sciences,
142432 Chernogolovka, Russia
* M.V. Lomonosov Moscow State University, Physical Department,
119992 Moscow, Russia

(Получена 12 сентября 2006 г. Принята к печати 3 октября 2006 г.)

The problems arising under submicron diffusion length measurements by the EBIC are discussed. As an example the results of diffusion length measurements in GaN are presented. It is shown that fitting the collection efficiency dependence on beam energy is the most reliable method for this purpose. The depth-dose dependence for GaN is calculated by the Monte-Carlo method and its analytical approximation is presented. This expression was verified experimentally by simultaneous fitting the collected current dependence on beam energy for a few applied bias values.

PACS: 68.37.Hk, 72.80.Ey

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