ФТП, 2007, том 41, выпуск 3

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Measurement and comparison of complex impedance
of silicon p-i-n photodiodes at different temperatures

H.Bayhan, S.Ozden

University of Mu\ugla, Faculty of Art and Science, Department of Physics,
48000 Mu\ugla, Turkey

(Получена 22 июня 2006 г. Принята к печати 30 августа 2006 г.)

The dark alternating current (ac), parameters of BPW34 and BPW41 (Vishay--Telefunken) silicon p-i-n photodiodes are measured and compared at different temperatures using the impedance spectroscopy technique. The impedance plots are nearly semicircle and typically distorted on the high freguency side. For BPW41, the distortion apparently arises from one of the two interfaces as expected for a typical p-i-n device. However, for BPW34, the presence of the distortion is attributed to the variation of photodiode capacitance and resistance with measurement frequency.

PACS: 85.60.Dw, 73.40.Lq

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