We analyze the asymmetric delta-doping dependence of nonlinear electron mobility μ of GaAs|In_xGa_1-xAs double quantum-well pseudo-morphic modulation doped field-effect transistor structure. We solve the Schrodinger and Poisson's equations self-consistently to obtain the sub-band energy levels and wave functions. We consider scatterings due to the ionized impurities (IMP), alloy disorder (AL), and interface roughness (IR) to calculate μ for a system having double sub-band occupancy, in which the inter-sub-band effects play an important role. Considering the doping concentrations in the barriers towards the substrate and surface sides as N_d1 and N_d2, respectively, we show that variation of N_d1 leads to a dip in μ near N_d1=N_d2, at which the resonance of the sub-band states occurs. A similar dip in μ as a function of N_d1 is also obtained at N_d1=N_d2 by keeping (N_d1+N_d2) unchanged. By increasing the central barrier width and well width, the dip in μ becomes sharp. We note that even though the overall μ is governed by the IMP- and AL-scatterings, the dip in μ is mostly affected through substantial variation of the sub-band mobilities due to IR-scattering near the resonance. Our results of nonlinear electron mobility near the resonance of sub-band states can be utilized for the performance analysis of GaAs|InGaAs pseudo-morphic quantum-well field-effect transistors. Keywords: asymmetric double quantum wells, GaAs|In_xGa_1-xAs structures, nonlinear electron mobility, pseudo-morphic HEMT structures, resonance of sub-band states.

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Дата начала обработки статистических данных - 27 января 2016 г.