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Luminescent response of GeSi structures grown from ion-molecular beams as a function of laser excitation power
Russian version
Smagina Zh.V. 1, Zinovyev V. A. 1, Zinovieva A. F. 1,2, Novikov P. L. 1,2, Dvurechenskii A. V. 1,2, Mudryi A.V. 3, Borodavchenko O.M. 3, Zhivulko V.D. 3
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
3Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, Minsk, Belarus
Email: smagina@isp.nsc.ru, zinoviev@isp.nsc.ru, aigul@isp.nsc.ru, novikov@isp.nsc.ru, dvurech@isp.nsc.ru
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The effect of laser excitation power on the luminescence properties of Ge/Si quantum dot (QD) structures produced by molecular beam epitaxy irradiated with 2 keV Ge+ ions was studied. With increasing power, a shift of the GeSi QD emission peak by ~10 meV was observed in the photoluminescence spectra of structures grown without ion irradiation. For structures grown under ion irradiation, the peak position remains unchanged, which is due to the appearance of an effective channel for radiative recombination through defects created by ion irradiation in GeSi QDs. It was found that the dependence of the photoluminescence intensity on the laser excitation power for ion-modified structures becomes linear above a threshold power of ~ 35/cm2, which is a characteristic sign of the presence of direct optical transitions. Keywords: quantum dots, germanium, silicon, epitaxy, ion irradiation, photoluminescence.
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