The effect of layer thickness on the optical parameters of phase-change material Sb2Te3
Gavrikov A. A. 1, Kuznetsov V.G. 2, Dyad'kina N. E.1, Kolobov A. V. 1
1Institute of Physics, Herzen State Pedagogical University of Russia, 191186 St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: agavrikov@herzen.spb.ru, vladimir.kuznetsov@mail.ioffe.ru, akolobov@herzen.spb.ru

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Antimony telluride (Sb2Te3) is one of the promising phase-change materials used in memory and data processing devices. Its layered structure allows for the fabrication of extremely thin layers with a thickness of about 1 nm. However, the issue of maintaining the contrast of properties between the amorphous and crystalline phases in extremely thin layers of Sb2Te3 has not yet been studied. In this study, the density functional theory calculations were used to perform a comparative analysis of the amorphous phase structure and optical property contrast for layers with a thickness of 1 ML, 2 ML and the bulk material. It was demonstrated that the optical property contrast is preserved down to 1 monolayer. Keywords: phase-change materials, Sb2Te3, monolayer, optical contrast, DFT method
  1. S. Raoux, M. Wuttig (eds). Phase-change materials: Science and Applications (Springer New York, N. Y., 2009)
  2. A.V. Kolobov, J. Tominaga. Chalcogenides: metastability and phase-change phenomena (Springer Cham, 2012)
  3. A. Redaelli (ed). Phase Change Memory: Device Physics, Reliability and Applications (Springer Verlag, Berlin--Heidelberg, 2018) p. 330
  4. T. Ohta, S.R. Ovshinsky. Photo-induced metastability in amorphous semiconductors, ed. by A.V. Kolobov (WILEY-VCH GmbH \& Co. KGaA, Weinheim, 2003) p. 310
  5. https://www.galex.ru/news/it/3256/
  6. https://club.dns-shop.ru/blog/t-101-ssd-nakopiteli-2-5/36065-chto-takoe-intel-optane-v-ssd-nakopitelyah-i-dlya-chego-eto-nujno/?utm_referrer=https://www.google.com/
  7. M. Xu, X. Mai, J. Lin, W. Zhang, Y. Li, Y. He, H. Tong, X. Hou, P. Zhou, X. Miao. Adv. Funct. Mater., 30, 2003419 (2020). DOI: 10.1002/adfm.202003419
  8. X. Chen, Y. Xue, Y. Sun, J. Shen, S. Song, M. Zhu, Z. Song, Z. Cheng, P. Zhou. Adv. Mater., 35, 2203909 (2023). DOI: 10.1002/adma.202203909
  9. V. Bhatnagar, A. Kumar. Energy Storage, 7, e70272 (2025). DOI: 10.1002/est2.70272
  10. N. Yamada. MRS Bulletin, 21, 48 (1996). DOI: 10.1557/S0883769400036368
  11. N. Yamada. Rev. Laser Eng., 28, 585 (2000). DOI: 10.2184/lsj.28.585
  12. A.V. Kolobov, P. Fons, J. Tominaga. Phys. Rev. B, 94, 094114 (2016). DOI: 10.1103/PhysRevB.94.094114
  13. H.K. He, Y.B. Jiang, J. Yu, Z.Y. Yang, C.F. Li, T.Z. Wang, D.Q. Dong, F.W. Zhuge, M. Xu, Z.Y. Hu, R. Yang. Mater. Horizons, 9, 1036 (2022). DOI: 10.1039/D1MH01772A
  14. M.Y. Zhang, Z.X. Wang, Y.N. Li, L.Y. Shi, D. Wu, T. Lin, S.J. Zhang, Y.Q. Liu, Q.M. Liu, J. Wang, T. Dong. Phys. Rev. X, 9, 021036 (2019). DOI: 10.1103/PhysRevX.9.021036
  15. X.-P. Wang, X.-B. Li, N.-K. Chen, B. Chen, F. Rao, S. Zhang. Adv. Sci., 8, 2004185 (2021). DOI: 10.1002/advs.202004185
  16. K. Ding, B. Chen, F. Rao. Mater. Sci. Semicond. Process., 134, 105999 (2021). DOI: 10.1016/j.mssp.2021.105999
  17. H. Zhang, C.X. Liu, X.L. Qi, X. Dai, Z. Fang, S.C. Zhang. Nature Physics, 5, 438 (2009). DOI: 10.1038/nphys1270
  18. K.F. Mak, C. Lee, J. Hone, J. Shan, T.F. Heinz. Phys. Rev. Lett., 105, 136805 (2010). DOI: 10.1103/PhysRevLett.105.136805
  19. D. Dragoni, J. Behler, M. Bernasconi. Nanoscale, 13, 16146 (2021). DOI: 10.1039/D1NR03432D
  20. J.P. Perdew, K. Burke, M. Ernzerhof. Phys. Rev. Lett., 77, 3865 (1996). DOI: 10.1103/PhysRevLett.77.3865
  21. M.D. Segall, P.J.D. Lindan, M.J. Probert, C.J. Pickard, P.J. Hasnip, S.J. Clark, M.C. Payne. J. Phys. Condens. Matter, 14, 2717 (2002). DOI: 10.1088/0953-8984/14/11/301
  22. S.J. Clark, M.D. Segall, C.J. Pickard, P.J. Hasnip, M.I.J. Probert, K. Refson, M.C. Payne, Z. Krist. Cryst. Mater., 220, 567 (2005). DOI: 10.1524/zkri.220.5.567.65075
  23. S. Grimme. J. Comput. Chem., 27, 1787 (2006). DOI: 10.1002/jcc.20495
  24. D. Vanderbilt. Phys. Rev. B, 41, 7892 (1990). DOI: 10.1103/PhysRevB.41.7892
  25. F.C. Mocanu, K. Konstantinou, J. Mavravcic, S.R. Elliott. Phys. Status Solidi RRL, 15, 2000485 (2021). DOI: 10.1002/pssr.202000485
  26. V.G. Kuznetsov, A.A. Gavrikov, M. Krbal, V.A. Trepakov, A.V. Kolobov. Nanomaterials, 13, 896 (2023). DOI: 10.3390/nano13050896
  27. Yu. Peter, M. Kardona. Osnovy fiziki poluprovodnikov (M., Fizmatlit, 2002) (in Russian)
  28. H.J. Monkhorst, J.D. Pack. Phys. Rev. B, 13 (12), 5188 (1976). DOI: 10.1103/PhysRevB.13.5188
  29. A.I. Ansel'm. Vvedenie v teoriyu poluprovodnikov (M., Nauka, 1978) (in Russian)
  30. D.S. Sholl, J.A. Steckel. Density Functional Theory: a practical introduction (John Wiley \& Sons, N. J.)

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