Shalimova M. B. 1, Sachuk N. V. 1
1Samara National Research University, Samara, Russia
Email: shamb@ssau.ru
The existence of near-interface traps, whose energy position is at the same level as the interface states in the middle of the germanium band gap, is proposed as the main factor influencing the atypical C-V characteristics of Al/SmF3/Ge metal-insulator semiconductor (MIS) structures. These near- interface traps are spatially located in the dielectric very close to the SmF3/nGe interface and exchange charge with the surface states via tunneling, which helps maintain a high electron density near the interface and create a majority-carrier enrichment regime. When sweeping from positive to negative voltage, the change in the effective charge of the Al/SmF3/Ge structures was ~(4-17)·10-8 C/cm2, which corresponded to a density of near-interface traps of DNit=(5-20)·1012 eV-1 cm-2. Keywords: MIS structure, germanium, samarium fluoride, density of interface states, density of near-interface traps, trap capture cross section.
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