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Segregation-considered feature analysis of the Zn diffusion in InGaAs/InAlAs/InP heterostructures
Russian version
Kopytov P. E. 1, Starkov I. A. 2, Novikov I. I. 1, Blokhin S. A. 3, Papylev D. S. 1, Levin R.V. 3, Andryushkin V. V. 1, Kovach Ya. N. 3, Nikitina E. V. 4, Voropaev K. O. 5, Tsatsulnikov A. F. 6, Karachinsky L. Ya. 1
1ITMO University, St. Petersburg, Russia
2R&D Center of Thin Film Technologies in Energetics under the Ioffe Institute LLC, St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
4Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
5OAO OKB-Planeta, Veliky Novgorod, Russia
6Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences, St. Petersburg, Russia
Email: kopytovpe@itmo.ru
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This paper presents segregation-considered diffusion model of Zn dopants in InGaAs/InAlAs/InP heterostructures, which makes it possible to calculate the qualitative and quantitative evolution of the Zn concentration profile. A wide range of experimental data has been analyzed for various technological regimes of Zn diffusion into InGaAs/InAlAs/InP heterostructures in a metalorganic chemical vapor deposition reactor using diethylzinc as the diffusant source. The influence of temperature and pressure on the diffusion and segregation coefficients is determined. It is demonstrated that ignoring segregation processes in diffusion model can lead to a significant error in determining the diffusion coefficients. The Zn diffusion profiles are calculated depending on the thickness of InGaAs/InAlAs/InP heterostructure layers and technological regimes of diffusion process. It has been demonstrated that the use of solid solution layers, even those of relatively small thickness, can significantly change the depth of diffusion penetration due to the low diffusion coefficient and the large gradient of the segregation coefficient. Keywords: diffusion, segregation, dopant, diethylzinc, indium phosphide.
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