Selective growth of GaAs epitaxial layers on a Si substrate by method of vapor-phase epitaxy from the organometallic compounds
Slipchenko S. O. 1, Shamakhov V. V. 1, Kondratov M. I. 1, Grishin A. E. 1, Tokarev M. V. 1, Fomin E. V.1, Nikolaev D. N.1, Myasoedov A. V. 1, Bert N. A.1, Pikhtin N. A. 1
1Ioffe Institute, St. Petersburg, Russia
Email: serghpl@mail.ioffe.ru
Using the method of selective epitaxy the two types of GaAs-structures were grown on Si substrate - with deposition of SiO2-mask directly on the substrate surface (type 1) and with deposition of SiO2-mask on the surface of a planar buffer layer of GaAs (type 2). The effect of the structure design on the surface morphology using atomic force microscopy and profilometry, as well as the defects of formed epitaxial layers using scanning and transmission electron microscopy, has been studied. It was demonstrated that the density of the growing-in dislocations was 2.9·108 and 2.1·108 cm-2 for the structures of 1 and 2 type, respectively. The RMS surface roughness in the center of the window was 4.87 and 3.26nm for structures of type 1 and 2, respectively. Keywords: vapor-phase epitaxy, selective epitaxy, silicon substrate, GaAs.
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