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Modeling of Landau levels, Hall and longitudinal resistance in the topological Anderson insulator based on HgTe/Hg0.3Cd0.7Te quantum well
Khomitsky D.V.
1, Lavrukhina E.A.
2, Telezhnikov A.V.
1, Zholudev M.S.
3
1Nizhny Novgorod State University, Nizhny Novgorod, Russia
2Physical and Technical Research Institute, National Research State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia
3Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Physical and Technical Research Institute, National Research State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia
3Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: khomitsky@phys.unn.ru, ekaterina.a.lavrukhina@gmail.com, Telezhnikov@phys.unn.ru, zholudev@ipmras.ru
The Landau levels, the conditions of the Hall resistance quantization and the behavior of the longitudinal resistance of the edge states in the magnetic field are studied for the HgTe/Hg0.3Cd0.7Te quantum well with (013) orientation and 14.1 nm width, corresponding to the semi-metallic spectrum and near the charge neutrality point. Based on recent experiments for such structure with a disorder in the phase of a topological Anderson insulator and applying the localization theory for the edge states in a magnetic field, the modeling of the observation threshold of the Hall conductance plateau is performed, as well as of the dependence of the longitudinal resistance of the edge states, at different temperature. The modeling results are in a good agreement with the experimental data. Keywords: topological Anderson insulator, semimetal, edge states, localization, Hall resistance, longitudinal resistance.
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