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High operating temperature photodiodes based on n-InAsSbP/InAs/p-InAsSbP heterostructures
Klimov A. A.
1, Kunkov R. E.
1, Lukhmyrina T. S.
1, Matveev B. A.
1, Remennyy M.A.
1
1Ioffe Institute, St. Petersburg, Russia
Email: a.klimov@mail.ioffe.ru
The results of development and research of photodiodes based on n+-InAs/n-InAsSbP/InAs/p-InAsSbP heterostructure in the temperature range of 125-500 K are presented. The design features of the epitaxial structure and photodetector chip are discussed, which provided values of current sensitivity and detectability of Si=1.6 A/W and D*=1.5·1010 cm · Hz1/2 · W-1 at room temperature and Si>0.1 A/W at T=500 K. Keywords: medium-wave photodiode, InAs photodiode, InAsSb photodiodes, high-temperature photodiodes, InAsSbP/InAs heterostructure, FSI photodiode.
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