Dielectric coatings for elementary charge fluctuation studies testing with Kelvin probe microscopy
Rodin V. D.1,2, Aksenov V. Ju.1, Ankudinov A. V.1, Bolshakov V. O.1, Vlasov A. S.1, Jarova Ju. A.1, Ilkiv I. V.3, Levin R. V.1, Malevskaya A. V.1, Mintairov A. M.1
1Ioffe Institute, St. Petersburg, Russia
2St. Petersburg Electrotechnical University ”LETI“, St. Petersburg, Russia
3St. Petersburg State University, St. Petersburg, Russia
Email: vdrodin@stud.etu.ru
Using scanning probe microscopy, the relief and variations of the surface potential of MgF2, SiNx, SiO2 dielectric coatings obtained by thermal evaporation, plasma-activated chemical deposition, and thermal oxidation of silicon, respectively, were studied. Compared with the first two, spatial fluctuations of the volume charge of the SiO2 coating are minimal. This allowed us to accurately study the charge states of Au nanoparticles deposited on the SiO2 coating and demonstrate the ability of scanning Kelvin probe microscopy to detect single-electron charge jumps on nanoparticles. Keywords: Scanning Kelvin-probe microscopy, potential map, charge states detecting.
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