Ferroelectric properties of (Al,Ga)InP2 alloys
Vlasov A. S. 1, Axenov V. Yu. 1, Ankudinov A. V. 1, Bert N. A. 1, Kalyuzhnyy N. A. 1, Pavlov N. V. 1, Pirogov E. V. 2, Salii R. A. 1, Soshnikov I. P. 1,2, Schenin A. S.1,3, Mintairov A. M. 1
1Ioffe Institute, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
3Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
Email: vlasov@scell.ioffe.ru

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Spontaneously ordered AlGaInP2 layers with CuPtB structure and ordering degree eta=0.16-0.46 were obtained by MOVPE epitaxy on GaAs substrates. Using the Kelvin probe microscopy method, the dependence of the layer surface potential on eta was found. Comparative analysis of the behavior of CuPtB-AlGaInP2- and CuPtB-GaInP2-alloys under mechanical stress showed the presence of a martensitic transition and the associated change in the surface potential in both materials. The effect of Al on increasing the value of the built-in electric field in the stressed state of the crystal lattice and reducing the recovery time (relaxation) of the layer was found. Keywords: Piezoelectric effect, martensitic transition, AlGaInP2, Kelvin probe microscopy.
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