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Elastic light-emitting diode based on InGaN/GaN microwires and SWCNT/PDMS matrix electrode
Russian version
Kolesina D.E.1, Kochetkov F.M.1,2, Vorobyev A.A.1, Novikova K.N.1, Goltaev A.A.1, Mukhin I.S.1,2
1St. Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St.Petersburg, Russia
2Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
Email: diana666167@gmail.com
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Presents the fabrication process of elastic light-emitting diode based on InGaN/GaN mircowires with "core-shell" structure encapsulated into commercial polydimethylsiloxane "Sylgard 184". In order to improve electrical and mechanical properties the matrix pixel electrodes - the addressing top and the general bottom - was established. Electro-optical perfomances was measured along to axis, and fabricated ligh-emitting diode demonstrates a blue light emission observed by human eyes and an able to stable work. Keywords: Elastic electronics, blue LED, AIIIBV microwires, PDMS, SWCNTs, optical lithography.
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