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Influence of emitter region doping level on the turn-on dynamics of low-voltage GaAs dynistors
Zhidyaev K. S.
1, Chigineva A. B.
1, Baidus N. V.
1, Samartsev I. V.
1, Kudrin A. V.
1
1Lobachevsky State University, Nizhny Novgorod, Russia
Email: zhidyaev@nifti.unn.ru, chigineva@nifti.unn.ru, bnv@nifti.unn.ru, samartsev@nifti.unn.ru, kudrin@nifti.unn.ru
A GaAs dynistors with mesa-strip has been fabricated and experimentally studied. It is shown that increasing the doping level of n- and p-emitters leads to a decrease in the turn-on time of GaAs dynistors and to an increase in their operation efficiency when generating nanosecond current pulses, namely to an increase in the amplitude and rate of rise of current and to a decrease in the rise time of the front. Keywords: Thyristor, dynistor, gallium arsenide, turn-on dynamics, current pulse.
- S. Vainshtein, I. Prudaev, G. Duan, T. Rahkonen. Solid State Commun., 365 (7), 115111 (2023)
- J. Glaser. IEEE Power Electron. Mag., 4 (1), 25 (2017)
- S. Vainshtein, G. Duan, G.T. Rahkonen, Z. Taylor, V. Zemlyakov, V. Egorkin, O. Smolyanskaya, T. Skotnicki, W. Knap. Results Phys., 19, 103509 (2020)
- S.N. Vainshtein, A. Kilpela, J. Kostamovaara, R. Myllyla, S. Starobinets, Ju. Zhilyaev. IEEE Trans. Electron Dev., 41 (8), 1444 (1994)
- S.N. Vainshtein, V.S. Yuferev, J.T. Kostamovaara, M.M. Kulagina, H.T. Moilanen. IEEE Trans. Electron Dev., 57 (4), 733 (2010)
- N. Ammouri, H. Christopher, J. Fricke, A. Ginolas, A. Liero, A. Maab dorf, H. Wenzel, A. Knigge. Electron. Lett., 59 (1), e12680 (2023)
- A. Liero, A. Klehr, T. Hoffmann, T. Prziwarka, W. Heinrich. Proc. 46th Eur. Microw. Conf. (EuMC) (London, UK, Oct. 2016) p. 1389
- S.O. Slipchenko, A.A. Podoskin, I.V. Shushkanov, V.A. Kryuchkov, A.E. Rizaev, M.I. Kondratov, A.E. Grishin, N.A. Pihtin, T.A. Bagaev, V.N. Svetogorov, M.A. Ladugin, A.A. Marmalyuk, V.A. Simakov. Pis'ma ZhTF, 50 (4), 43 (2024). (in Russian)
- S.O. Slipchenko, A.A. Podoskin, V.V. Zolotarev, L.S. Vavilova, A.Yu. Leshko, M.G. Rastegaeva, I.V. Miroshnikov, I.S. Shashkin, N.A. Pikhtin, T.A. Bagaev, M.A. Ladugin, A.A. Padalitsa, A.A. Marmalyuk, V.A. Simakov. Phys. Inst., 50 (5), S527 (2023)
- S.O. Slipchenko, A.A. Podoskin, I.V. Shushkanov, V.A. Kryuchkov, A.E. Rizaev, M.I. Kondratov, A.E. Grishin, N.A. Pihtin, T.A. Bagaev, V.N. Svetogorov, M.A. Ladugin, A.A. Marmalyuk, V.A. Simakov. FTP, 57 (8), 678 (2023). (in Russian)
- O.S. Soboleva. Cand. dis. (SPb., FTI im A.F.Ioffe, 2022). (in Russian)
- A. Blicher. Thyristor physics (N. Y.--Heidelberg--Berlin, Springer Verlag, 1976)
- S.O. Slipchenko, O.S. Soboleva, A.A. Podoskin, Yu.K. Kirichenko, T.A. bagaev, I.V. Yarotskaya, N.A.P ikhtin. FTP, 57 (4), 295 (2023). (in Russian)
- V.A.Gurtov. Tverdotelnaya electronika: Ucheb.posobie, 2e izd., pererab.i dop. (M., 2005). (in Russian)
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