Volumes and Issues
Home » Semiconductors » Year 2025, issue 1 » Article p. 45
<<<
On sputter damage of silicon heterojunction solar cells and its recovery by illuminated annealing
Russian version
Abolmasov S. N.1,2, Levitskii V. S.1,2, Titov A. S.1,2, Terukov E. I.1,2
1R and D Center of Thin Film Technologies in Energetics, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: s.abolmasov@hevelsolar.com
PDF
Mechanisms of plasma damage caused by sputtering of transparent conductive oxide (TCO) layers in silicon heterojunction (SHJ) solar cells have been investigated. It is shown that a buffer layer at the amorphous/crystalline silicon (a-Si/c-Si) interface can play an essential role in mitigating the sputter damage. More than 9 %abs. loss in the conversion efficiency is observed for rear emitter SHJ cells with nanocrystalline silicon n-layer when the underlying buffer layer changes from amorphous silicon carbide to amorphous silicon. It is revealed that the anomalous efficiency loss is mostly related to breaking Si-H bonds by NUV photons at the a-Si/c-Si interface during the TCO sputtering. Illuminated annealing of these cells at elevated temperature using a distributed light source based on light emitting diodes (LEDs) recovers the anomalous efficiency loss by more than 7 %abs. Other possible mechanisms of sputter damage and mitigation strategies are also discussed. Keywords: magnetron sputtering, transparent conductive oxide, a-Si/c-Si interface, surface passivation, conversion efficiency.
  1. H. Lin, et al.. Nat. Energy, 8, 789 (2023)
  2. X. Ru, et al.. Joule, 8 (4), 1092 (2024)
  3. M. Taguchi, E. Maruyama, M. Tanaka. Jap. J. Appl. Phys., 47, 814 (2008)
  4. A.V. Sachenko, et al.. J. Appl. Phys., 119, 225702 (2016)
  5. I. Romijn. "Bifacial solar cells --- a brief review", presented at nPV workshop (Konstanz, Germany, 2017)
  6. C. Ballif, S. De Wolf, A. Descoeudres, Z.C. Holman. Semiconductors and Semimetals, 90, 73 (2014)
  7. A.S. Abramov, D.A. Andronikov, S.N. Abolmasov, E.I. Terukov. Silicon Heterojunction Technology: A Key to High Efficiency Solar Cells at Low Cost, in High-Efficiency Low-Cost Photovoltaics: Recent Developments, V. Petrova-Koch, R. Hezel, and A. Goetzberger, Eds. (Cham: Springer International Publishing, 2020) pp. 113-132
  8. ITRPV, International Technology Roadmap for Photovoltaic, 15th Ed., May 2024
  9. E. Aydin, et al.. Matter, 4 (11), 3549 (2021)
  10. B. Demaurex, S. De Wolf, A. Descoeudres, Z.C. Holman, C. Ballif. Appl. Phys. Lett., 101, 171604 (2012)
  11. B.M. Meiners, S. Holinski, P. Schafer, S. Hohage, D. Borchert. Proc. 31th European PV Solar Energy Conference (14-18 September, Hamburg, Germany, 2015)
  12. V. Linss, M. Bivour, H. Itawa, K. Ortner. 9th International Conference on Crystalline Silicon Photovoltaics, AIP Conf. Proc., 2174, 040009 (2019)
  13. A. Illiberi, P. Kudlacek, A.H.M. Smets, M. Creatore, M.C.M. van de Sanden. Appl. Phys. Lett., 98, 242115 (2011)
  14. A.H.T. Le, V.A. Dao, D.P. Pham, S. Kim, S. Dutta, C.P.T. Nguyen, Y. Lee, Y. Kim, J. Yi. Sol. Energy Mater. Sol. Cell., 192, 36 (2019)
  15. A. Eberst, et al.. Adv. Phys. Res., 2400036 (2024)
  16. E. Kobayashi, et al.. Appl. Phys. Lett., 109, 153503 (2016)
  17. E. Kobayashi, et al.. Sol. Energy Mater. Sol. Cell., 173, 43 (2017)
  18. M. Wright, M. Kim, P. Dexiang, Z. Wenbin, B. Wright, B. Hallam. AIP Conf. Proc., 2147, 110006 (2019)
  19. C. Madumelu, B. Wright, A. Soeriyadi, M. Wright, D. Chen, B. Hoex, B. Hallam. Sol. Energy Mater. Sol. Cell., 218, 110752 (2020)
  20. M. Wright, A. Soeriyadi, B. Wright, D. Andronikov, I. Nyapshaev, S. Abolmasov, A. Abramov, B. Hallam. IEEE J. Photovoltaics, 12, 267 (2022)
  21. M. Wright, et. al.. A.H. Soeriyadi, M. Kim, B. Wright, B.V. Stefani, D. Andronikov, I. Nyapshaev, S. Abolmasov, A. Abramov, R.S. Bonilla, B. Hallam. Sol. Energy Mater. Sol. Cell., 248, 112039 (2022)
  22. S.N. Abolmasov. Plasma Sources Sci. Technol., 21, 035006 (2012)
  23. J.T. Gudmundsson. Plasma Sources Sci. Technol., 29, 113001 (2020)
  24. K. Ellmer,.J. Phys. D: Appl. Phys., 33, R17 (2000)
  25. T. Welzel, K. Ellmer. J. Vac. Sci. Technol. A, 30, 061306 (2012)
  26. Welzel, K. Ellmer. J. Phys. D: Appl. Phys., 46, 315202 (2013)
  27. W.M. Lau, I. Bello, L.J. Huang, X. Feng, M. Vos, I.V. Mitchell. J. Appl. Phys., 74 (12), 7101 (1993)
  28. M.C. Moore, N. Kalyanasundaram, J.B. Freund, H.T. Johnson. Nuclear Instruments and Methods in Physics Research B, 225, 241 (2004)
  29. P. Sigmund. Phys. Rev., 184, 383 (1969)
  30. R. Behrisch (ed.). Sputtering by Particle Bombardment I, II and III, Top. Appl. Phys., 47, 52, 64 (Springer, Berlin, Heidelberg 1981, 1983, 1991), Russ. Translation: (MIR, Moscow 1984, 1 986, 1998)
  31. A. Defresne, O. Plantevin, P. Roca i Cabbarocas. AIP Advances, 6, 125107 (2016)
  32. S. Nunomura, T. Tsutsumi, K. Nakane, A. Sato, I. Sakata, M. Hori. Jap. J. Appl. Phys., 61, 056003 (2022)
  33. D. Kruger, R. Kurps, P. Formanek, G. Weidner. Solid State Phenomena, 95-96, 77 (2003)
  34. D. Popovic, M. Mozetiv cx, A. Vesel, G. Primc, R. Zaplotnik. Plasma Processes and Polymers, e2100061 (2021)
  35. F. Kurdesau, G. Khripunov, A.F. da Cunha, M. Kaelin, A.N. Tiwari. Journal of Non-Crystalline Solids, 352 (9-20), 1466 (2006)
  36. R.A. Sinton, A. Cuevas, M. Struckings. Proc. 25th Photovoltaic Specialists Conference (Washington DC, USA, 1996) pp. 457-460
  37. I.A. Starkov, I.A. Nyapshaev, A.S. Starkov, S.N. Abolmasov, A.S. Abramov, V.S. Levitskiy, E.I. Terukov. J. Vac. Sci. Technol. A, 35 (6), 061301 (2017)
  38. P. Lippens, D. Chiu, C. Szepesi. Proc. 27th European Photovoltaic Solar Energy Conference and Exhibition (Frankfurt, Germany, 2012) pp. 2079-2082
  39. H. Efstathiadis, Z. Yin, F.W. Smith. Phys. Rev. B, 46, 13119 (1992)
  40. K. Wittmaack. Phys. Rev. B, 68, 235211 (2003)
  41. S.K. Chunduri, M. Schmela. "Heterojunction Solar Technology: working hard on cost reductions", TaiyangNews Report, 2023
  42. T. Chen, F. Kohler, A. Heidt, R. Carius, F. Finger. Proc. 39th Photovoltaic Specialists Conference (Tampa, FL, USA, 2013) pp. 0917-0920

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru