Afanasev A. V. 1, Zabrodskiy V. V. 2, Ilyin V. A.1, Serkov A. V. 1, Trushlyakova V. V. 1, Chigirev D. A. 1
1St. Petersburg Electrotechnical University ”LETI“, 197022 St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: avafanasev@etu.ru
The possibility of using reactive-ion etching (RIE) to form broadband antireflective structures on the surface of photode- tector areas of 4H-SiC p+-n-n+-photodiodes was investigated. It is shown that during the RIE process utilizing aluminum masks (about ~ 50 nm thick), along thinning of the upper p+-epilayer, a self-ordered profiled surface with a dominant sharp relief of 600-800 nm is formed due to the effect of micromasking of SiC surface. The formation of this microprofiled surface allows to increase the sensitivity and EQY of 4H-SiC photodiodes. Keywords: 4H-SiC, p+-n-n+-photodiode, UV band, microprofiling, reactive-ion etching (RIE), responsivity, external quantum yield (EQY)
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