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Evolution of composition and topography of AIIIBV semiconductors during sputtering with argon ions
Russian version
Ieshkin A. E. 1, Tatarintsev A. A. 1, Senatulin B. R. 2, Skryleva E. A. 2
1Department of Physics, Lomonosov Moscow State University, Moscow, Russia
2National University of Science and Technology MISiS, Moscow, Russia
Email: ieshkin@physics.msu.ru, tatarintsev@physics.msu.ru
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A systematic study of the composition and structure of the surface of AIIIBV semiconductors (GaP, GaAs, GaSb, InP, InAs, InSb) after irradiation with 3 keV argon ions was carried out. The surface composition was determined using X-ray photoelectron spectroscopy. The results obtained are discussed in terms of preferential sputtering and radiation-stimulated segregation. It is shown that the observed enrichment with the metallic component is not explained by these processes alone. A developed relief in the form of nanopillars was observed on the surface of indium-containing materials, while no relief development was found on the GaP surface. This behavior is associated with the patterns of wetting of the semiconductor surface by the surface-enriching component. Keywords: sputtering, AIIIBV, nanotopography, preferential sputtering, surface segregation, XPS.
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