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Fluctuation analysis of the surface microrelief of silicon-on-insulator structures after radiation exposure *
Russian version
Puzanov A. S. 1,2, Zabavichev I. Yu. 1,2, Abrosimova N. D. 1, Bibikova V. V. 1,2, Volkova E. V. 2, Nedoshivina A. D. 2, Potekhin A. A. 1,2, Tarasova E. A. 2, Hazanova S. V. 2, Loginov B. A. 3, Blinnikov D.Yu.4, Vtorova V. S.4, Kirillova V. V. 4, Liashko E. A.4, Makeev V. S.4, Pervykh A. R. 1, Obolensky S. V. 2,1
1Federal State Unitary Enterprise "Russian Federal Nuclear Center - All-Russian Research Institute of Experimental Physics", Sarov, Nizhny Novgorod Region, Russia
2Lobachevsky University of Nizhny Novgorod, Nizhny Novgorod, Russia
3National Research University of Electronic Technology (MIET), Zelenograd, Russia
4Educational Center “Sirius”, Sochi, Russia
Email: puzanov@rf.unn.ru, zabavichev.rf@gmail.com, andnenastik@inbox.ru, veronbib@mail.ru, khazanova@phys.unn.ru, obolensk@rf.unn.ru
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Using the method of two-dimensional fluctuation analysis, images of the surface of "silicon on insulator" structures were analyzed. It is found that the Hurst parameter of the non-irradiated surface was H0=0.93, for γ-ray irradiation Hγ=0.71-0.87 and for neutron irradiation Hn=0.91-0.94. This indicates that non-power correlations of the height function and random walk type processes for all the samples studied. The influence of radiation on the change in the standarddeviation and correlation length of the microroughness of the surface of samples at the microscale and the degradation. Keywords: silicon on insulator, micro-roughness, charge carrier mobility, fluctuation analysis, fractal dimension.
  1. J.R. Schriepper. Phys. Rev., 97 (3), 641 (1955)
  2. R.F. Greene, D.R. Frankl, J. Zemel. Phys. Rev., 118 (4), 967 (1960)
  3. F. Stern, W.E. Howard. Phys. Rev., 163 (3), 816 (1967)
  4. R.E. Prange, T.-W. Nee. Phys. Rev., 168 (3), 779 (1968)
  5. T. Ando. J. Phys. Soc. Japan, 43 (5), 1616 (1977)
  6. R.F. Pierret, C.T. Sah. Solid-State Electron., 11, 279 (1968)
  7. C.T. Sah, T.H. Ning, L.L. Tschopp. Surf. Sci., 32, 561 (1972)
  8. Y.C. Cheng, E.A. Sullivan. Surf. Sci., 34, 717 (1973)
  9. Y.C. Cheng, E.A. Sullivan. J. Appl. Phys., 44 (8), 3619 (1973)
  10. Y.C. Cheng, E.A. Sullivan. J. Appl. Phys., 45 (1), 187 (1974)
  11. Y. Matsumoto, Y. Uemura. Jpn. J. Appl. Phys., 2, 367 (1974)
  12. J.R. Brews. J. Appl. Phys., 46 (5), 2193 (1975)
  13. A. Hartstein, T.H. Ning, A.B. Fowler. Surf. Sci., 58, 178 (1976)
  14. F. Stern. Phys. Rev. Lett., 44 (22), 1469 (1980)
  15. T. Mimura. IEEE Trans. Microw. Theory Tech., 50 (3), 780 (2002)
  16. G.K. Celler, S. Cristoloveanu. J. Appl. Phys., 93 (9), 4955 (2003)
  17. H. Sakaki, T. Noda, K. Hirakawa, M. Tanaka, T. Matsusue. J. Appl. Phys., 51 (23), 1934 (1987)
  18. K. Uchida, S.-I. Takagi. J. Appl. Phys., 82 (17), 2916 (2003)
  19. A. Pirovano, A.L. Lacaita, G. Zandler, R. Oberhuber. IEEE Trans. Electron Dev., 47 (4), 718 (2000)
  20. A. Pirovano, A.L. Lacaita, G. Ghidini, G. Tallarida. IEEE Electron Dev. Lett., 21 (1), 34 (2000)
  21. M. Lundstrom. Fundamentals of carrier transport (Cambridge University Press, 2000)
  22. S.C. Sun, J.D. Plummer. IEEE Trans. Electron Dev., 27 (8), 1497 (1980)
  23. F.W. Sexton, J.R. Schwank. IEEE Trans. Nucl. Sci., 32 (6), 3975 (1985)
  24. E.V. Kiseleva, S.V. Obolensky. Mikroelektronika, 35 (5), 374 (2006). (in Russian)
  25. S.M. Goodnick, D.K. Ferry, C.W. Wilmsen, Z. Liliental, D. Pathy, O.L. Krivanek. Phys. Rev. B, 32 (12), 8171 (1985)
  26. B.B. Mandelbrot. The Fractal Geometry of Nature (N.Y., Freeman, 1982)
  27. T. Yoshinobu, A. Iwamoto, H. Iwasaki. Jpn. J. Appl. Phys., 33 (1A), 67 (1994)
  28. C.-K. Peng, S. Havlin, H.E. Stanley, A.L. Goldberger. Chaos, 5, 82 (1995)
  29. A.V. Alpatov, S.P. Vikhrov, N.V. Grishankina. FTP, 47 (3), 340 (2013). (in Russian)
  30. A.V. Alpatov, S.P. Vikhrov, N.V. Rybina. FTP, 49 (4), 467 (2015). (in Russian)
  31. S.V. Obolenskii, E.V. Volkova, A.B. Loginov, B.A. Loginov, E.A. Tarasova, A.S. Puzanov, S.A. Korolev. Pis'ma ZhTF, 47 (5), 38 (2021). (in Russian)
  32. E.V. Volkova, A.B. Loginov, B.A. Loginov, E.A. Tarasova, A.S. Puzanov, S.A. Korolev, E.S. Semenovykh, S.V. Khazanova, S.V. Obolensky. FTP, 55 (10), 846 (2021). (in Russian)
  33. B.A. Loginov, D.Yu. Blinnikov, V.C. Vtorova, V.V. Kirillova, E.A. Lyashko, V.S. Makeev, A.R. Pervykh, N.D. Abrosimova, I.Yu. Zabavichev, A.S. Puzanov, E.V. Volkova, E.A. Tarasova, S.V. Obolensky. ZhTF, 93 (7), 1025 (2023). (in Russian)
  34. B.A. Loginov, P.B. Loginov, V.B. Loginov, A.B. Loginov. Nanoindustriya, 12 (6), 352 (2019). (in Russian)
  35. D.K. Schroder. Semiconductor Material and Device Characterization (N.J., Wiley-IEEE Press, 2006)
  36. H.E. Hurst. Trans. Am. Soc. Civil Eng., 116, 770 (1951)
  37. A.-L. Barabasi, H.E. Stanley. Fractal concepts in surface growth (Cambridge, Cambridge University Press, 1995)
  38. Yu.A. Kalush, V.M. Loginov. Sib. journ. industr. matem, 5 (4), 29 (2002). (in Russian)
  39. D. Necas, P. Klapetek. Cent. Eur. J. Phys., 10 (1), 181 (2012).

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