Fefelov S. A.1, Kazakova L. P.1,2, Bogoslovskiy N. A. 1, Bylev A. B. 2
1Ioffe Institute, St. Petersburg, Russia
2Kirov State Forest Technical University, St. Petersburg, Russia
Email: s.fefelov@list.ru
The results of the study of Ge2Sb2Te5 films of submicron thickness from 40 to 800 nm are presented. The current-voltage characteristics of TiN/Ge2Sb2Te5/Au structures were measured and compared. It is established that the electrode resistance and the near-contact space charge region have a significant effect on the current-voltage characteristic. It is shown that the near-contact space charge region, located mainly in the Ge2Sb2Te5 film, is the region where the switching process appears. The critical field strength at which the switching process in the space charge region begins is estimated. A method for determining the field strength in the amorphous part of the film before switching is proposed. Keywords: chalcogenide glassy semiconductors, Ge2Sb2Te5, phase-change memory, switching, contact resistance.
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