Dynamics of laser generation in single-mode microstripe semiconductor laser bar (1065 nm) operating in gain-swithching mode
Podoskin A. A. 1, Shushkanov I. V. 1, Rizaev A. E. 1, Krychkov V. A.1, Grishin A. E. 1, Pikhtin N. A. 1
1Ioffe Institute, St. Petersburg, Russia
Email: podoskin@mail.ioffe.ru
The study investigates microstripe bars of optically isolated single-mode lasers based on heterostructures with double asymmetry, operating under sub-nanosecond current pulse pumping conditions. For microstripe bars with different filling densities of the emitting aperture, the effect of time delay dispersion of various stripes' turn-on is demonstrated, with a maximum difference up to 50 ps. The developed microstripe bar designs demonstrate stable zero mode lasing. The microstripe bar consisting of 10 stripes with a 6 mum width and a stripe period of 20 μm demonstrates pulses with a peak power of 3 W and a duration of 140 ps under 0.4 ns current pulses pumping. Keywords: semiconductor laser, laser bar, gain switching.
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