Effect of proton and electron irradiation on the parameters of gallium nitride Schottky diodes
Lebedev A. A. 1, Sakharov A. V. 1, Kozlovski V. V.2, Malevsky D. A. 1, Nikolaev A. E. 1, Levinshtein M. E.1
1Ioffe Institute, St. Petersburg, Russia
2Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
Email: Shura.Lebe@mail.ioffe.ru
The carrier removal rates during proton and electron irradiations of n-type GaN grown by metal-organic vapor phase epitaxy were determined. Irradiation was carried out with protons with energy of 15 MeV in the fluence range 0≤Phi_p≤5·1014 cm-2; the range of fluences when irradiated with electrons with energy of 0.9 MeV was 0≤Phin≤5≤1016 cm-2. The value of the removal rate during proton irradiation, eta_p~140 cm-1, is close to the lower limit of currently known values of etap and indicates a sufficiently high level of radiation resistance of the studied material with respect to proton irradiation. The rate of carrier removal under the influence of electron irradiation, etae is ~0.47 cm-1 and corresponds to the typical values of etae for type gallium nitride obtained by various methods. Keywords: gallium nitride, proton irradiation, electron irradiation, carrier removal rate.
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