Current generation in Pd/InP structures in hydrogen medium
Shutaev V. A. 1, Sidorov V. G.2, Grebenshchikova E. A.1, Yakovlev Yu. P.1
1Ioffe Institute, St. Petersburg, Russia
2LLC “Independent Business & Scientific Group”, Russia
Email: vadimshutaev@mail.ru

PDF
The electrical properties of Pd/InP Schottky diodes and Pd-layers deposited on glass substrate by thermal evaporation in vacuum, and placed in hydrogen medium containing 10-100 vol.% of hydrogen, were studied. The current generation in Pd/InP Schottky diodes, as well as the decrease in resistance of Pd layers were observed in hydrogen medium. It is proposed that the current generation in the structures under study is due to free electrons as result of hydrogen atoms ionization. The current induced by these electrons exists in electric circuit until hydrogen is present in the environment. It is shown that the hydrogen current generators can be created based on the Pd/InP diode structure. Keywords: palladium, Pd/InP, hydrogen, ionization, hydrogen current generator.
  1. Ya.I. Mikhailenko. Kurs obshchei i neogranicheskoi khimii (M., Vysshaya Shkola, 1966), p. 384. (in Russian)
  2. K.A. Gol'bert, M.S. Vigdergauz. Vvedenie v gazovuyu khromatografiyu, 3rd ed. (M., Khimiya, 1990), p. 19. (in Russian)
  3. T.T. Bakumenko, A.A. Belaya, V.Ya. Vol'fson, Yu.I. Pyatnitskii, et al. Kataliticheskie svoistva veshchestv (Kiev, Naukova Dumka, 1968), p. 1002. (in Russian)
  4. G.I. Zhirov. Fiz. Tekh. Vys. Davlenii, 13 (2), 71 (2003). (in Russian)
  5. Yu.K. Tovbin, E.V. Votyakov. Phys. Solid State, 42 (7), 1192 (2000)
  6. P. Hertel. Z. Physic, 268, 111 (1974)
  7. M. Yussouf, B.K. Rao, P. Jena. Solid State Commun., 94 (7), 549 (1995)
  8. M.W. Tew, J.T. Miller, J.A. van Bokhoven. J. Phys. Chem. C, 113 (34), 15140 (2009)
  9. Shun Dekura, Hirokazu Kobayashi, Kohei Kusada, Hiroshi Kitagawa. ChemPhysChem., 20, 1158 (2019). DOI: 10.1002/cphc.201900109
  10. L.Yu. Nemirovich-Danchenko, O.V. Lopatina, L.A. Svyatkin, I.P. Chernov. Phys. Solid State, 63 (8), 1267 (2021)
  11. V.A. Shutaev, V.G. Sidorov, E.A. Grebenshchikova, Yu.P. Yakovlev. Opt. Spectrosc., 128 (5), 596 (2020)
  12. K. Zdansky. Nanoscale Res. Lett., 6 (1), 490 (2011)
  13. K. Zdansky, M. Muller, O. Cernohorsky, R. Yatskiv. Conf. Proceedings Nanocon, 51 (2011)
  14. K. Skucha, Zh. Fan, K. Jeon, A. Javey, B. Boser. Sensors Actuators B, 145, 232 (2010)
  15. Kh.M. Salikhov, S.V. Slobodchikov, B.V. Russu. SPIE, 3122, 494 (1997)
  16. Yu.M. Koroteev, O.V. Gimranova, I.P. Chernov. Phys. Solid State, 53 (5), 896 (2011)
  17. O.V. Konstantinov, V.D. Dymnikov, M.A. Mittsev. Semiconductors, 42 (8), 931 (2008)
  18. V.A. Shutaev, E.A. Grebenshchikova, V.G. Sidorov, Yu.P. Yakovlev. Semiconductors, 57 (8), 369 (2023)
  19. V.A. Shutaev. Candidate's Dissertation in Mathematics and Physics (SPb., Ioffe Inst., 2020). (in Russian)
  20. V.A. Shutaev, E.A. Grebenshchikova, V.A. Matveev, N.N. Gubanova, Yu.P. Yakovlev. Opt. Spectrosc., 131 (3), 391 (2023)
  21. H.-I. Chen, Y.-I. Chou. Semicond. Sci. Technol., 19, 39 (2004)
  22. C.C. Ndaya, N. Javahiraly, A. Brioude. Sensors, 19 (20), 4478 (2019)
  23. L.E. Bar'yudin. Fiz. Tverd. Tela, 37 (5), 1484 (1995). (in Russian)
  24. V.A. Shutaev, V.A. Matveev, E.A. Grebenshchikova, V.G. Shchelokov, Yu.P. Yakovlev. Opt. Spectrosc., 129 (12), 1306 (2021)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru