Coherent spin dynamics in the nonuniform ferromagnetic InGaAs/GaAs/δ-Mn structures
Zaitsev S. V.1, Dremov V. V.2, Stolyarov V. S.2
1Osipyan Institute of Solid State Physics RAS, Chernogolovka, Russia
2Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudnyi, Russia
Email: szaitsev@issp.ac.ru, dremovs54@gmail.com, vasiliy@travel.rustolyarov.vs@phystech.ru
A detailed study of the coherent spin dynamics of photoexcited carriers in a heterostructure with an InGaAs/GaAs quantum well and a δ-Mn-layer separated from the quantum well by a 3-10 nm-thick GaAs spacer indicates its strong non-uniformity in the plane and mesoscopic separation to the regions of carrier localization. Mesoscopic separation with a characteristic scale of ~ 100-200 nm is also observed using magnetic force microscopy below the Curie temperature of the δ-Mn-layer. Keywords: coherent spin dynamics, quantum well InGaAs/GaAs, ferromagnetic δ-Mn-layer, mesoscopic separation, fluctuation potential.
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