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Defects in GaInAsBi Epitaxial Films on Si(001) Substrates
Russian version
Pashchenko A. S. 1,2, Devitsky O. V. 1,2, Lunina M. L. 1
1Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
2North-Caucasian Federal University, Stavropol, Russia
Email: as.pashchenko@gmail.com, v2517@rambler.ru, marinalschaz@gmail.com
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Growth of a thin GaInAsBi film was carried out on a Si (001) substrate by pulsed laser deposition. The growth was carried out in the Volmer-Weber. The grains are preferentially monophase, but are separated by dislocation network, and in some areas, there are antiphase boundaries. Investigation of the real structure by transmission electron microscopy and X-ray diffractometry shows that stress relaxation occurred due to plastic shears by means of a nucleation of dislocations and a slip close-packed 111 planes, as well as twinning and a change in surface roughness. Using X-ray diffractometry, it was found that the GaInAsBi film has a lattice parameter of 5.856 Angstrem. The root-mean-square roughness of the film surface, measured by atomic force microscopy, was 0.51 nm. Keywords: III-V compounds, highly mismatched alloys, pulsed laser deposition, GaInAsBi, silicon.
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