Semiconductors
To authors
Volumes and Issues
- 2024
- 2023
- 2022
In situ ellipsometric control of growth processes of ZnTe and CdTe buffer layers in technology of molecular beam epitaxy of mercury cadmium telluride
Shvets V.A.
1,2, Marin D.V.
1,2, Yakushev M.V.
1, Rykhlitskii S.V.
1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
Email: basil5353@mail.ru, marin@isp.nsc.ru, yakushev@isp.nsc.ru, rhl@isp.nsc.ru
The problems of in situ ellipsometric control during the growth of ZnTe and CdTe buffer layers intended for cadmium-mercury-tellurium epitaxy are considered. It has been established that for 20 nm ZnTe layers the spectral dependences of the optical constants near the absorption edge are smoothed, which indicates the presence of structural defects in the film. It has been shown that the microrelief of the CdTe growth surface is a criterion for the structural perfection of the layers and can be measured using an ellipsometer both at the early stages and during steady-state growth. Keywords: molecular beam epitaxy, in situ ellipsometric control, CdTe, microrelief, growth defects.
- Mercury Cadmium Telluride. Growth, Properties and Applications, ed. by P. Capper and J. Garland (Wiley, 2011)
- Y.G. Sidorov, S.A. Dvorestkiy, V.S. Varavin, N.N. Mikhailov, M.V. Yakushev, I.V. Sabinina. FTP, 35, 1092 (2001). (in Russian)
- J. Zhao, Y. Chang, G. Badano, S. Sivananthan, J. Markunas, S. Lewis, J.H. Dinan, P.S. Wijewarnasuriya, Y. Chen, G. Brill, N. Dhar. J. Electron. Mater., 33, 881 (2005)
- K.K. Svitashev, V.A. Shvets, A.S. Mardezhov, S.A. Dvoretskii, Yu.G. Sidorov, V.S. Varavin. ZhTF, 65 (9), 110 (1995). (in Russian)
- E.V. Spesivtsev, S.V. Rykhlitskii, V.A. Shvets. Avtometriya, 47 (5), 5 (2011). (in Russian)
- S. Adachi. Optical constants of crystalline and amorphous semiconductors. Numerical data and graphical information (Kluwer Academic Publishers, 1999)
- Y. Chang, G. Badano, J. Zhao, Y.D. Zhou, R. Ashokan, C.H. Grein, V. Nathan. J. Electron. Mater., 33, 709 (2004)
- D.E. Aspnes, A.A. Studna. Phys. Rev. B, 27, 985 (1983)
- D. A. G. Bruggeman. Annalen der Physik, 416 (7), 636 (1935)
- V.A. Shvets. Opt. i spectr., 107, 822 (2009). (in Russian)
- X. Xu, C.P. Grigoropoulus. Int. J. Heat Mass Transfer, 36, 4163 (1993)
- D.V. Marin, V.A. Shvets, I.A. Azarov, M.V. Yakushev, S.V. Rykhlitskii. Infr. Phys. Technol., 116, Article 103793 (2021)
- E.V. Spesivtsev, S.V. Rykhlitsky, V.A. Shvets, S.I. Chikichev, A.S. Mardezhov, N.I. Nazarov, V.A. Volodin. Thin Sol. Films, 455, 700 (2004)
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.