Luminescence characteristics of chromium-doped by high-temperature diffusion CVD-ZnSe
Kalinushkin V. P.1, Gladilin A. A.1, Uvarov O. V.1, Mironov S. A.1, Ilichev N. N.1, Studenikin M. I.1, Storozhevykh M. S.1, Gavrishchuk E. M.2, Ikonnikov V. B.2, Timofeeva N. A.2
1Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia
2Devyatykh Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: sa.mironov@kapella.gpi.ru

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Using two-photon confocal microscopy in the spectral range of 0.44-0.73 μm, the spatial distribution of the luminescent characteristics of CVD-ZnSe doped with chromium using the HIP process was studied. It has been established that as a result of this process, four types of impurity-defect centers are formed in the crystal. It is shown that their formation involves point centers that form in the doping zone and diffuse deep into the crystal. Assumptions are made about the nature of these point centers. Keywords: zinc selenide, two-photon confocal microscopy, semiconductors, defects.
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