Semiconductors
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- 2023
- 2022
Optimization of the single quantum well CdHgTe/HgTe heterostructure parameters for the plasmon-phonons generation
Devoted to the choice of the optimal quantum well band gap for the generation of two-dimensional plasmon-phonons in CdHgTe/HgTe heterostructures. It is shown that the optimal effective band gap is a band gap that slightly exceeds the energy of a longitudinal optical phonon in the barrier. Keywords: CdHgTe/HgTe heterostructures with quantum wells, generation of two-dimensional plasmon-phonons, optimal width of band gap. DOI: 10.61011/SC.2023.04.56419.06k
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Дата начала обработки статистических данных - 27 января 2016 г.