Peculiarities of surface structure and surface electron transport in correlated topological insulator SmB6
Artemov E.A.1,2, Mantuzov A.V. 1,2, Zhurkin V.S.1, Bozhko A.D. 1, Kudryavtsev O.S. 1, Andryushechkin B.V. 1, Shevlyuga V.M. 1, Shitsevalova N.Yu.3, Filipov V.B.3, Glushkov V.V. 1
1Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia
2AEM Technologies LLC, Moscow, Russia
3Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Kiev, Ukraine
Email: artpoliofan@mail.ru, antoniovm@mail.ru, dok5555@mail.ru, bozhko@lt.gpi.ru, leolegk@gmail.com, andrush@kapella.gpi.ru, shevlyg@kapella.gpi.ru, nshitsevalova@gmail.com, glushkov@lt.gpi.ru

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New method of chemical-mechanical polishing (CMP) with compositions based on nanometer-sized amorphous silica particles has been developed for the treatment of the surface of single crystals of samarium hexaboride SmB6. It is shown that the CMP method makes it possible to achieve surface roughness of the SmB6 single crystals for a defect-free area with a root-mean-square profile deviation not exceeding 0.8 nm. The effect of the CMP method on the structural and electronic properties of the (100) and (110) surfaces of single-crystal SmB6 samples is discussed. Keywords: samarium hexaboride, chemical-mechanical polishing, surface conductivity, topological insulator. DOI: 10.61011/SC.2023.04.56418.02k
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