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- 2022
Electron irradiation hardness of high-voltage 4H-SiC Schottky diodes in the operating temperature range
Effect of irradiation with 0.9 MeV electrons on the parameters of 4H-SiC Schottky diodes with a limiting blocking voltage Ub=600 and 1700 V was studied for the first time in the range of operating temperatures Ti (23 and 175oC). The range of fluences Phi was 1·1016-2·1016 cm-2 for devices with Ub=600 V and 5·1015-1.5·1016 cm-2 for devices with Ub=1700 V. Irradiation at room temperature increases significantly the differential resistance of the base of the diodes. Irradiation with the same doses at Ti=175oC - i.e. at limiting operating temperature of devices, does not affect practically the parameters of current-voltage characteristics. Nevertheless, the DLTS spectra demonstrate a significant increase in the concentration of deep levels in the upper half of the band gap not only after irradiation at room temperature, but also after irradiation at Ti=175oC. Keywords: silicon carbide, Schottky diodes, electron irradiation, current-voltage characteristics, DLTS spectra.
- R. Singh. Microelectronics Reliability, 46 (5-6), 713 (2006)
- T. Nakamura, M. Sasagawa, Y. Nakano, T. Otsuka, M. Miura. Int. Power Electronics Conf. (IPEC 2010), (Sapporo, Japan, June 21-24, 2010)
- Q. Zhang, R. Callanan, M.K. Das, S. Ryu, A.K. Agarwal, J.W. Palmour. IEEE Trans. Power Electron., 25 (12), 2889 (2010)
- B.J. Baliga. 76th Device Research Conf. (DRC 2018), (Santa Barbara, California, USA, June 24-27, 2018) p. 31. doi: 10.1109/drc.2018.8442172
- A.A. Lebedev, P.A. Ivanov, M.E. Levinstein, E.N. Mokhov, S.S. Nagalyuk, A.N. Anisimov, P.G. Baranov. UFN, 189 (8), 803 (2019) (in Russian)
- T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W.J. Choyke, A. Schoner, N. Nordell. Phys. Status Solidi A, 162, 199 (1997)
- H. Kaneko, T. Kimoto. Appl. Phys. Lett., 98, 262106 (2011)
- A. Castaldini, A. Cavallini, L. Rigutti, F. Nava. Appl. Phys. Lett., 85, 3780 (2004)
- E. Omotoso, W.E. Meyer, F.D. Auret, A.T. Paradzah, M. Diale, S.M.M. Coelho, P.J. Janse van Rensburg. Mater. Sci. Semicond. Process., 39, 112 (2015)
- P. Hazdra, Jan Vobecky. Phys. Status Solidi A, 216, 1900312 (2019)
- A.A. Lebedev, V.V. Kozlovski, M.E. Levinshtein, A.E. Ivanov, K.S. Davydovskaya, V.S. Yuferev, A.V. Zubov. Radiation Phys. Chem., 185, 109514 (2021)
- A. A. Lebedev, V.V. Kozlovski, K.S. Davydovskaya, M.E. Levinshtein. Materials, 14, 4976 (2021). https://doi.org/10.3390/ma14174976
- A.A. Lebedev, V.V. Kozlovskiy, M.E. Levinstein, D.A. Malevskiy, G.A. Oganesyan, A.M. Strel'chuk, K.S. Davydovskaya. FTP, 56 (4), 441 (2022) (in Russian)
- https://datasheetspdf.com/datasheet/CPW3-0600S002.html
- https://datasheetspdf.com/datasheet/CPW3-1700S010.html
- P.A. Ivanov, M.E. Levinshtein. Microelectron. Reliab., 122, 114159 (2021)
- M.E. Levinshtein, S.L. Rumyantsev, M.S. Shur (eds). Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe (John Wiley \& Sons, Inc., N.Y., 2001)
- V.V. Kozlovskiy, A.A. Lebedev, V.N. Lomasov, E.V. Bogdanova, N.V. Seredova. FTP, 48 (8), 1033 (2014) (in Russian)
- V.V. Kozlovski, A.A. Lebedev, E.V. Bogdanova. J. Appl. Phys., 117, 155702 (2015)
- J. Vobecky, P. Hazdra, S. Popelka, R.K. Sharma. IEEE Trans. Electron Dev., 62 (6), 1964 (2015)
- K. Danno, T. Kimoto. J. Appl. Phys., 100, 113728 (2006)
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