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1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers
Russian version
DOI: 10.21883/SC.2022.08.54120.9890
Blokhin S.A. 1, Babichev A. V. 2, Karachinsky L. Ya. 2, Novikov I. I. 2, Blokhin A. A. 1, Bobrov M. A. 1, Kuzmenkov A. G. 1, Maleev N. A. 1, Andryushkin V.V. 2, Bougrov V.E. 2, Gladyshev A. G. 3, Denisov D. V. 4, Voropaev K. O.5, Zhumaeva I.O. 5, Ustinov V. M. 6, Li H.7, Tian S.С.8,9, Han S.Y.8,9, Sapunov G.A. 8,9, Egorov А. Yu. 3,10, Bimberg D.8,9
1Ioffe Institute, St. Petersburg, Russia
2ITMO University, St. Petersburg, Russia
3Connector Optics LLC, St. Petersburg, Russia
4St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
5OAO OKB-Planeta, Veliky Novgorod, Russia
6Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences, St. Petersburg, Russia
7College of Mathematical and Physical Sciences, Qingdao University of Science and Technology, Qingdao, China
8Bimberg Chinese-German Center for Green Photonics, Changchun Institute of Optics, Fine Mechanics and Physics
9Center of Nanophotonics, Institute of Solid State Physics, Technische Universitat Berlin, Berlin, Germany
10Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
Email: blokh@mail.ioffe.ru, a.babichev@mail.ioffe.ru, leonid.karachinsky@connector-optics.com, Innokenty.Novikov@connector-optics.com, bloalex91@yandex.ru, bobrov.mikh@gmail.com, kuzmenkov@mail.ioffe.ru, Maleev@beam.ioffe.ru, vvandriushkin@itmo.ru, vladislav.bougrov@niuitmo.ru, andrey.gladyshev@connector-optics.com, dmitry.denisov@connector-optics.com, voropaevko@okbplaneta.ru, ZhumaevaIO@okbplaneta.ru, vmust@beam.ioffe.ru, lilinlu88@163.com, tiansicong@ciomp.ac.cn, hansaiyi@163.com, sapunovgeorgiy@gmail.com, anton@beam.ioffe.ru, bimberg@physik.tu-berlin.de
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The results of complex studies of static and dynamic performance of 1550 nm-range VCSELs, which were created by direct bonding (wafer fusion technique) InAlGaAs/InP optical cavity wafers with AlGaAs/GaAs distributed Bragg reflector wafers grown by molecular beam epitaxy, are presented. The VCSELs with a buried tunnel junction diameter less than 7 μm demonstrated a single-mode lasing with a side-mode suppression ratio more than 40 dB; however, at diameters less than 5 μm, a sharp increase in the threshold current is observed. It is associated to the appearance of a saturable absorber due to penetration of optical mode into the non-pumped regions of the active region. The maximum single-mode output optical power and the -3 dB modulation bandwidth reached 4.5 mW and 8 GHz, respectively, at 20oC. The maximum data rate at 20oC under non-return-to-zero on-off keying modulation was 23 Gb/s for a short-reach link based on single-mode fiber SMF-28. As the length of the optical link increased up to 2000 m, the maximum data rate dropped to 18 Gbit/s. The main factors affecting the high-speed operation and data transmission range are defined and discussed, and the further ways to overcome themit are proposed. Keywords: VCSEL, wafer fusion, molecular beam epitaxy, single-mode operation, high-speed performance.
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