Semiconductors
To authors
Volumes and Issues
- 2023
- 2022
Structural and gas-sensitive characteristics of thin semiconductor PdO films of various thicknesses during ozone detection
Ryabtsev S. V.
1, Ghareeb D. A. A.1, Turishchev S.Yu.
1, Obvintseva L. A.
2, Shaposhnik A. V.
3, Domashevskaya E. P.
1
1Voronezh State University, Voronezh, Russia
2Scientific and Technological Center of Unique Instrumentation of the Russian Academy of Sciences, Moscow, Russia
3Voronezh State Agrarian University, Voronezh, Russia
2Scientific and Technological Center of Unique Instrumentation of the Russian Academy of Sciences, Moscow, Russia
3Voronezh State Agrarian University, Voronezh, Russia
Email: ryabtsev@phys.vsu.ru, dinafareda2018@gmail.com, tsu@phys.vsu.ru, obvint@yandex.ru, a.v.shaposhnik@gmail.com, ftt@phys.vsu.ru
PdO films were obtained by thermal deposition of palladium metal with a thickness of 30 and 90 nm, followed by its oxidation in air at different temperatures. PdO oxide films are characterized by transmission electron microscopy (TEM) and reflection high-energy electron diffraction (RHEED). Data on the semiconductor properties and gas sensitivity to different concentrations of ozone in the air are obtained. The optimal temperature conditions for the oxidation of the films are established, which ensure their uniform phase composition and the absence of electrical noise during the detection of gases. The mechanism of the electrical noise appearance in ultrathin films associated with their fragmentation during oxidative annealing is proposed and justified. The possibility of detecting ozone impurities in the air below the maximum permissible concentration (MPC) by PdO semiconductor films is shown. Keywords: palladium oxide thin films, phase composition, electrical noise, gas sensor properties.
- S.V. Ryabtsev, A.V. Shaposhnick, A.N. Lukin, E.P. Domashevskaya. Sensors Actuators B, 59 (1), 6 (1999). DOI: 10.1016/S0925-4005(99)00162-8
- S.V. Ryabtsev, V.M. Ievlev, A.M. Samoylov, S.B. Kuschev, S.A. Soldatenko. Thin Sol. Films, 636, 751 (2017). DOI: 10.1016/j.tsf.2017.04.009
- S.V. Ryabtsev, A.V. Shaposhnik, A.M. Samoylov, A.A. Sinelnikov, S.A. Soldatenko, S.B. Kuschev, V.M. Ievlev. Doklady Physical Chemistry, 470,158 (2016). DOI: 10.1134/S0012501616100055
- V.M. Ievlev, S.V. Ryabtsev, A.M. Samoylov, A.V. Shaposhnik, S.B. Kuschev, A.A. Sinelnikov. Sensors Actuators B, 255 (2), 1335 (2018). DOI: 10.1016/j.snb.2017.08.121
- S.V. Ryabtsev, D.A.A. Ghareeb, A.A. Sinelnikov, S.Yu. Turishchev, L.A. Obvintseva, A.V. Shaposhnik. Matter and Interphases, 23 (1), 56 (2021). DOI: 10.17308/kcmf.2021.23/3303
- J.M. Heras, G. Estiu, L. Viscido. Thin Sol. Films, 188, 165 (1990). DOI: 10.1016/0040-6090(90)90202-O
- P.O. Nilsson, M.S. Shivaraman. J. Phys. C: Solid-State Phys., 12, 1423 (1979). DOI: 10.1088/0022-3719/12/7/030
- V.Val. Sobolev, D.O. Mordas, V.V. Sobolev. Glass Phys. Chem., 29, 360 (2003). DOI: 10.1023/A:1025116708801
- Powder Diffraction File, Alphabetical Index Inorganic Compounds. JCPDS
- Semiconductor Sensors in Physico-Chemical Studies (Handbook of Sensors and Actuators, v. 4), ed. by L.Yu. Kupriyanov (Elsevier, Amsterdam--Lausanna--N.Y.--Oxford--Shannon--Tokio, 1996). SBN 5-02-001542-3
- L.A. Obvintseva, T.B. Sharova, A.K. Avetisov, I.P. Sukhareva. Russ. J. Phys. Chem. A, 92 (6), 1099 (2018). DOI: 10.1134/S0036024418060122
- G. Korotcenkov, V. Brinzari, B.K. Cho. Critical Rev. Solid State and Mater. Sci., 43 (2), 83 (2017). DOI: 10.1080/10408436.2017.1287661
- T. Tadashi. In: Chemical Sensor Technology. V. 2. Ed. by T. Seiyama (Tokyo, Koudansha; Amsterdam, Elsevier, 1989) p. 59
- T. Tadashi, T. Hiromasa, S. Tatsuo, H. Kenji. Sensors Actuators B, 25 (1-3), 548 (1995)
- L.A. Obvintseva. Ross. chim. zhurn., 52 (2), 113 (2008) (in Russian)
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.