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Terahertz emission from silicon carbide nanostructures
Russian version
DOI: 10.21883/SC.2022.13.53897.9709
Bagraev N. T.1,2, Kukushkin S. A. 1, Osipov A. V. 1, Klyachkin L. E.2, Malyarenko A. M.2, Khromov V. S.1,2
1Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: bagraev@mail.ioffe.ru, sergey.a.kukushkin@gmail.com
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For the first time, electroluminescence detected in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the framework of the Hall geometry. Silicon carbide on silicon was grown by the method of substitution of atoms on silicon. The electroluminescence from the edge channels of nanostructures is induced due to the longitudinal drain- source current. The electroluminescence spectra obtained in the terahertz frequency range, 3.4, 0.12 THz, arise due to the quantum Faraday effect. Within the framework of the proposed model, the longitudinal current induces a change in the number of magnetic flux quanta in the edge channels, which leads to the appearance of a generation current in the edge channel and, accordingly, to terahertz radiation. Keywords: silicon carbide on silicon, terahertz emission, electroluminescence, nanostructure, quantum Faraday effect.
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