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Optical and Structural Properties of Hg0.7Cd0.3Te Epitaxial Films
Andryushchenko D.A.1, Ruzhevich M.S.1, Smirnov A. M.
1, Bazhenov. N.L.
2, Mynbaev K.D.
2, Remesnik V.G.
3
1ITMO University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Ioffe Institute, St. Petersburg, Russia
3Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: dimitriy296@mail.ru, mazaahaaka@gmail.com, andrei.smirnov@niutmo.ru, bazhnil.ivom@mail.ioffe.ru, mynkad@mail.ioffe.ru, remesnik@isp.nsc.ru
The results of comparative studies of the optical and structural properties of Hg0.7Cd0.3Te bulk crystals and epitaxial films grown by various methods are presented. The data of photoluminescence studies performed in the temperature range 4.2-300 K showed the similarity of the optical properties of different samples and indicated a significant disordering of the solid solution. According to X-ray diffraction data, however, the scale of the disordering was not directly related to the structural quality of the material. The prospects for using the material grown by various methods in optoelectronics applications are discussed. Keywords: HgCdTe, defects, luminescence, X-ray diffraction.
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