High-speed current switches based on AlGaAs/GaAs heterostructure thyristors with a thick p-base (8 μm)
Slipchenko S. O.1, Podoskin A. A.1, Shushkanov I. V.1, Kondratov M. I.1, Grishin A. E.1, Rizaev A. E.1, Shamahov V. V. 1, Shashkin I. S.1, Nikolaev D. N.1, Pikhtin N. A.1, Bashkatov A. S.2, Bagaev T. A.3, Ladugin M. A.3, Marmalyuk A. A. 3, Simakov V. A. 3
1Ioffe Institute, St. Petersburg, Russia
2FSBI ”VNIIR“, 141002 Moscow Region, Mytishchi, Russia
3“Polyus” Research Institute of M.F. Stelmakh Joint Stock Company, Moscow, Russia
AlGaAs/GaAs heterostructures with thick p-base (8 μm) have been developed for thyristors, and current switches based on these structures have been created. In static mode, a maximum blocked voltage of 120 V has been demonstrated. Minimum turn-on delays reached 7 ns under control current of 220 mA. It was shown that generation of pulse sequences with frequency up to 20 kHz at operating voltage of 110 V and up to 120 kHz at operating voltage of 30 V is possible. Evaluation of dynamic characteristics indicates the capability of generating current pulses with amplitude of 68 A and duration of 2.9 ns. Keywords: heterostructure, thyristor, fast current switch, semiconductor laser, short pulse.
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