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Dedicated to the blessed memory of the pioneers of amorphous semiconductors B.T. Kolomiets and N.A. Goryunova Chalcogenide vitreous semiconductors in memory and information processing devices (R e v i e w)
Russian version
Kolobov A. V.1,2, Lazarenko P. I. 3,2
1Institute of Physics, Herzen State Pedagogical University of Russia, 191186 St. Petersburg, Russia
2НИИ физических исследований, Российский государственный педагогический университет им. А.И. Герцена, Санкт-Петербург, Россия
3Research laboratory ”Active photonic materials and devices“, National Research University of Electronic Technology (MIET), 124498 Moscow, Zelenograd, Russia
Email: akolobov@me.com
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The discovery in 1955 of the semiconducting properties of chalcogenide glasses by B.T. Kolomiets and N.A. Goryunova started the era of amorphous semiconductors. The present review focuses on phase-change chalcogenides, which are now widely used in data recording and processing devices. After a historical introduction, the structure and properties of these materials are discussed, as well as current views on the mechanism of reversible phase transformations between the amorphous and crystalline states and the nature of the property contrast between them. This is followed by a description of commercial implementations of phase-change materials in optical and electronic non-volatile memory devices. The review concludes with a discussion of current trends in research and applications of phase-change chalcogenides, in particular, in 3D XPoint memory devices based on the Ovshinsky threshold switching effect, as well as in electronic and photonic neuromorphic networks. Keywords: Chalcogenide vitreous semiconductors, phase-change materials, memory effect, Ovshinsky threshold switching, optical discs, non-volatile electronic memory, 3D XPoint memory, neuromorphic networks.
  1. B.T. Kolomiets, N.A. Goryunova. ZhTF, 25 (6), 984 (1955). (in Russian)
  2. N. Mott. Science, 201 (4359), 871 (1978)
  3. B.T. Kolomiets. J. Non-Cryst. Solids, 59, 973 (1983)
  4. S.R. Ovshinsky. Phys. Rev. Lett., 21 (20), 1450 (1968)
  5. L. Hoddeson, P. Garrett. The Man Who Saw Tomorrow: The Life and Inventions of Stanford R. Ovshinsky (Cambridge, Massachusetts, USA, MIT Press, 2018)
  6. The US Congress, Minutes of the meeting of September 11, 2012 p. S6103. Available at: https://www.congress.gov/112/crec/2012/09/11/CREC-2012-09-11-pt1-PgS6103.pdf (Date of access: 01.10.2023)
  7. S. Raoux, M. Wuttig. Phase-Change Materials: Science and Applications (Berlin, Germany, Springer, 2009)
  8. A.V. Kolobov, J. Tominaga. Chalcogenides: Metastability and Phase-Change Phenomena (Heidelberg, Germany, Springer, 2012)
  9. Elektronnye yavleniya v khal'kogenidnykh stekloobraznykh poluprovodnikakh, pod red. K.D. Tsendin (M., Nauka, 1996). (in Russian)
  10. J. Orava, A.A. Greer, B. Gholipour, D.W. Hewak, C.E. Smith. Nature Materials, 11, 279 (2012)
  11. N. Yamada. MRS Bulletin, 21, 48 (1996)
  12. N. Yamada. Rev. Laser Eng., 28 (9), 585 (2000)
  13. H. Iwasaki, Y. Ide, M. Harigaya, Y.K. Kageyama, I.F. Fujimura. Jpn. J. Appl. Phys., 31 (1), 461 (1992)
  14. R.O. Jones. J. Phys.: Condens. Matter, 37, 113001 (2025)
  15. N. Yamada, T. Matsunaga. J. Appl. Phys., 88, 7020 (2000)
  16. T. Nonaka, G. Ohbayashi, Y. Toriumi, Y. Mori, H. Hashimoto. Thin Sol. Films, 370, 258 (2000)
  17. E.A. Stern, Y. Yacoby. J. Phys. Chem. Solids, 57 (10), 1449 (1996)
  18. D. Haskel, E.A. Stern, V. Polinger, F. Dogan. Phys. Rev. B, 64, 104510 (2001)
  19. H. Cheng, H. Yao, Y. Xu, J. Jiang, Y. Yang, J. Wang, X. Li, Y. Li, J. Shao. Chem. Mater., 36 (8), 3764 (2024)
  20. A.V. Kolobov, D.J. Kim, A. Giussani, P. Fons, J. Tominaga, R. Calarco, A. Gruverman. APL Materials, 2 (6), 066103 (2014)
  21. C. Rinaldi, S. Varotto, M. Asa, J. S awinska, J. Fujii, G. Vinai, S. Cecchi, D. Di Sante, R. Calarco, I. Vobornik, G. Panaccione. Nano Lett., 18, 2751 (2018)
  22. D. Di Sante, P. Barone, R. Bertacco, S. Picozzi. Adv. Mater., 25, 509 (2012)
  23. X. Zhang, Z. Bu, S. Lin, Z. Chen, W. Li, Y. Pei. Joule, 4, 986 (2020)
  24. H. Cheng, J. Zhang, C. Lin, X. Li, F. Peng, G. Li, Y. Li. J. Phys. Chem. C, 122, 28460 (2018)
  25. A.V. Kolobov, J. Tominaga, P. Fons, T. Uruga. Appl. Phys. Lett., 82, 382 (2003)
  26. A.H. Edwards, A.C. Pineda, P.A. Schultz, M.G. Martin, A.P. Thompson, H.P. Hjalmarson. J. Phys.: Condens. Matter, 17, L329 (2005)
  27. T. Chattopadhyay, J.X. Boucherle. J. Phys. C: Solid State Phys., 20, 1431 (1987)
  28. M. Krbal, A.V. Kolobov, P. Fons, R.E. Simpson, T. Matsunaga, J. Tominaga, N. Yamada. Phys. Rev. B, 84, 104106 (2011)
  29. P. Fons, A.V. Kolobov, M. Krbal, J. Tominaga, K.S. Andrikopoulos, S.N. Yannopoulos, G.A. Voyiatzis, T. Uruga. Phys. Rev. B, 82, 155209 (2010)
  30. T. Matsunaga, P. Fons, A.V. Kolobov, J. Tominaga, N. Yamada. Appl. Phys. Lett., 99, 231906 (2011)
  31. T. Egami, S.J. Billinge. Underneath the Bragg Peaks: Structural Analysis of Complex Materials (Oxford, UK, Elsevier, 2012)
  32. B.K. Teo. EXAFS: Basic Principles and Data Analysis (Berlin, Germany, Springer Verlag, 2012)
  33. A.V. Kolobov, P. Fons, A.I. Frenkel, A.L. Ankudinov, J. Tominaga, T. Uruga. Nature Materials, 3, 703 (2004)
  34. H. Zhang, C.X. Liu, X.L. Qi, X. Dai, Z. Fang, S.C. Zhang. Nature Physics, 5, 438 (2009)
  35. B. Xu, J. Zhang, G. Yu, S. Ma, Y. Wang, Y. Wang. J. Appl. Phys., 124, 165106 (2018)
  36. Y. Zheng, M. Xia, Y. Cheng, F. Rao, K. Ding, W. Liu, Y. Jia, Z. Song, S. Feng. Nano Research, 9, 3453 (2016)
  37. Y. Zheng, W. Song, Z. Song, Y. Zhang, T. Xin, C. Liu, Y. Xue, S. Song, B. Liu, X. Lin, V.G. Kuznetsov, I.I. Tupitsyn, A.V. Kolobov, Y. Cheng. Adv. Sci., 11, 2301021 (2024)
  38. F. Betts, A. Bienenstock, S.R. Ovshinsky. J. Non-Cryst. Solids, 4, 554 (1970)
  39. K. Hirota, K. Nagino, G. Ohbayashi. J. Appl. Phys., 82, 65 (1997)
  40. S.J. Pickart, Y.P. Sharma, J.P. de Neufville. J. Non-Cryst. Solids, 34, 183 (1979)
  41. P. Ma, H. Tong, T. Huang, M. Xu, N. Yu, X. Cheng, C.J. Sun, X. Miao. J. Phys. Chem. C, 121, 1122-8 (2017)
  42. G. Lucovsky, R.M. White. Phys. Rev. B, 8, 660 (1973)
  43. K. Shportko, S. Kremers, M. Woda, D. Lencer, J. Robertson, M. Wuttig. Nature Materials, 7, 653 (2008)
  44. Y. Cheng, S. Wahl, M. Wuttig. Phys. Status Solidi RRL, 15, 2000482 (2021)
  45. R.O. Jones, S.R. Elliott, R. Dronskowski. Adv. Mater., 35, 2300836 (2023)
  46. A.V. Kolobov, M. Krbal, P. Fons, J. Tominaga, T. Uruga. Nature Chemistry, 3, 311 (2011)
  47. J. Akola, R.O. Jones. Phys. Rev. B, 76, 235201 (2007)
  48. S. Caravati, M. Bernasconi, T.D. Kuhne, M. Krack, M. Parrinello. Appl. Phys. Lett., 91, 171906 (2007)
  49. M. Micoulaut, A. Piarristeguy, H. Flores-Ruiz, A. Pradel. Phys. Rev. B, 96, 184204 (2017)
  50. J. Hegedus, S.R. Elliott. Nature Materials, 7, 399 (2008)
  51. M. Boniardi, D. Ielmini. Appl. Phys. Lett., 98, 242106 (2011)
  52. M. Boniardi, D. Ielmini, S. Lavizzari, A.L. Lacaita, A. Redaelli, A. Pirovano, IEEE Trans. Electron Dev., 57, 2690 (2010)
  53. P. Noe, C. Sabbione, N. Castellani, G. Veux, G. Navarro, V. Sousa, F. Hippert, F. d'Acapito. J. Phys. D: Appl. Phys., 49, 035305 (2015)
  54. T. Matsunaga, J. Akola, S. Kohara, T. Honma, K. Kobayashi, E. Ikenaga, R.O. Jones, N. Yamada, M. Takata, R. Kojima. Nature Materials, 10, 129 (2011)
  55. K. Sokolowski-Tinten, J. Bialkowski, M. Boing, A. Cavalleri, D. von der Linde. Phys. Rev. B, 58, R11805 (1998)
  56. A. Rousse, C. Rischel, S. Fourmaux, I. Uschmann, S. Sebban, G. Grillon, P. Balcou, E. Forster, J.P. Geindre, P. Audebert, J.C. Gauthier. Nature, 410, 65 (2001)
  57. X.B. Li, X.Q. Liu, X. Liu, D. Han, Z. Zhang, X.D. Han, H.B. Sun, S.B. Zhang. Phys. Rev. Lett., 107, 015501 (2011)
  58. S.C. Tiwari, R.K. Kalia, A. Nakano, F. Shimojo, P. Vashishta, P.S. Branicio. J. Phys. Chem. Lett., 11, 10242 (2020)
  59. L. Yang, S.C. Tiwari, S. Fukushima, F. Shimojo, R.K. Kalia, A. Nakano, P. Vashishta, P.S. Branicio. J. Phys. Chem. Lett., 13, 10230 (2022)
  60. P. Fons, H. Osawa, A.V. Kolobov, T. Fukaya, M. Suzuki, T. Uruga, N. Kawamura, H. Tanida, J. Tominaga. Phys. Rev. B, 82, 041203 (2010)
  61. C.H. Lam. History of Phase Change Memories. In: S. Raoux, M. Wuttig (eds). Phase Change Materials (Boston, MA, Springer, 2009) c. 1
  62. T. Ohta. J. Optoelectron. Adv. Mater., 3, 609 (2001)
  63. N. Yamada. MRS Bull., 21, 48 (1996)
  64. N. Yamada. Rev. Laser Eng., 28, 585 (2000)
  65. T. Shima, T. Nakano, J. Kim, J. Tominaga. Jpn. J. Appl. Phys., 44, 3631 (2005)
  66. 3D XPoint. Wikipedia, The Free Encyclopedia. Access mode: https://en.wikipedia.org/wiki/3D_XPoint (date of access: 03.11.2025)
  67. Intel 3D XPoint Memory Die Removed from Intel OptaneTM PCM (Phase Change Memory). Access mode: https://web.archive.org/web/20171201031032/ http://techinsights.com/about-techinsights/overview/blog/ intel-3D-xpoint-memory-die-removed-from-intel-optane-pcm/ (date of access: 05.11.2025)
  68. The official website of STMicroelectronics. Press Item N t4687 // newsroom.st.com. Available at: https://newsroom.st.com/media-center/press-item.html/ t4687.html (date of access: 04.11.2025)
  69. X. Li, H. Chen, C. Xie, D. Cai, S. Song, Y. Chen, D. Cai, Y. Lei, M. Zhu, Z. Song. Phys. Status Solidi RRL, 13, 1800558 (2019)
  70. F. Arnaud, P. Zuliani, J. Reynard, A. Gandolfo, F. Disegni, P. Mattavelli, E. Gomiero, G. Samanni, C. Jahan, R. Berthelon, O. Weber, E. Richard, V. Barral, A. Villaret, S. Kohler et al. Truly innovative 28 nm FDSOI technology for automotive micro-controller applications embedding 16 MB phase change memory // Proc. IEEE Int. Electron Dev. Meet. (San Francisco, USA, 2018)
  71. The official website of STMicroelectronics. Phase Change Memory (PCM) // st.com. Available at: https://www.st.com/content/st_com/en/about/innovation-technology/PCM.html (date of access: 04.11.2025)
  72. Z. Zhao, S. Clima, D. Garbin, R. Degraeve, G. Pourtois, Z. Song, M. Zhu. Nano-Micro Lett., 16, 81 (2024)
  73. D.M. Kroll. Phys. Rev. B, 9, 1669 (1974)
  74. V.G. Karpov, Y.A. Kryukov, I.V. Karpov, M. Mitra. Phys. Rev. B, 78, 052201 (2008)
  75. G.C. Vezzoli, P.J. Walsh, L.W. Doremus. J. Non-Cryst. Solids, 18, 333 (1975)
  76. D. Ielmini. Phys. Rev. B, 78, 035308 (2008)
  77. P. Fantini, N. Polino, A. Ghetti, D. Ielmini. Adv. Electron. Mater., 9, 2300037 (2023)
  78. F. Buscemi, E. Piccinini, L. Vandelli, F. Nardi, A. Padovani, B. Kaczer, D. Garbin, S. Clima, R. Degraeve, G.S. Kar, F. Tavanti, A. Slassi, A. Calzolari, L. Larcher. IEEE Trans. Electron Dev., 70, 1808 (2023)
  79. T. Ravsher, R. Degraeve, D. Garbin, A. Fantini, S. Clima, G.L. Donadio, S. Kundu, H. Hody, W. Devulder, J. Van Houdt, V. Afanas'ev. Proc. Int. Electron Dev. Meet., 18, 2300415 (2021)
  80. S. Hong, H. Choi, J. Park, Y. Bae, K. Kim, W. Lee, S. Lee, H. Lee, S. Cho, J. Ahn, S. Kim. Proc. Int. Electron Dev. Meet. (San Francisco, California, USA, 2022) p. 18
  81. T. Ravsher, D. Garbin, A. Fantini, R. Degraeve, S. Clima, G.L. Donadio, S. Kundu, H. Hody, W. Devulder, G. Potoms, T. Peissker. Phys. Status Solidi RRL, 18, 2300415 (2024)
  82. H.J. Sung, M. Choi, Z. Wu, H. Chae, S. Heo, Y. Kang, B. Koo, J.B. Park, W. Yang, Y. Park, Y. Ham. Adv. Sci., 11, 2408028 (2024)
  83. J. Park. Electronics, 9, 1414 (2020)
  84. C. Li, M. Hu, Y. Li, H. Jiang, N. Ge, E. Montgomery, J. Zhang, W. Song, N. Davila, C.E. Graves, Z. Li, J.P. Strachan, P. Lin, Z. Wang, M. Barnell, Q. Wu, R.S. Williams, J.J. Yang, Q. Xia. Nature Electronics, 1, 52 (2018). DOI: 10.1038/s41928-017-0002-z
  85. A.I. Iliasov, A.V. Emelyanov, V.V. Rylkov, A.N. Matsukatova, E.V. Kukueva, I.D. Kuchumov, P.A. Forsh, A.V. Sitnikov, V.A. Demin, P.K. Kashkarov, M.V. Kovalchuk. J. Phys. D: Appl. Phys., 58, 365305 (2025)
  86. P.E. Lvov, R.T. Sibatov, R.M. Ryazanov, D.V. Novikov. Materials Today Commun., 38, 108464 (2024)
  87. C.D. Wright, L. Wang, M.M. Aziz, J.A.V. Diosdado, P. Ashwin. Phys. Status Solidi B, 249, 1978 (2012)
  88. A.S. Ilyin, A.N. Matsukatova, M.N. Martyshov, A.V. Yemelyanov, V.V. Rylkov, V.A. Demin, P.A. Forsh, P.K. Kashkarov, M.V. Kovalchuk. UFN, accepted for publication. DOI: 10.3367/UFNr.2025.09.040037
  89. Abu Sebastian, M. Le Gallo, E. Eleftheriou. J. Phys. D: Appl. Phys., 52, 443002 (2019)
  90. M. Rutten, M.E. Kaes, A. Albert, M.Wuttig. Sci. Rep., 5, 1 (2015).
  91. M. Suri, D. Garbin, O. Bichler, D. Querlioz, D. Vuillaume, C. Gamrat, B. De Salvo. 2013 IEEE ACM Int.Symp. on Nanoscale Architectures (NANOARCH), (Brooklyn, N. Y., USA, 2013) p. 140
  92. E. Trusov, Y. Vorobyov, A. Ermachikhin, L. Al-Khadge, A. Yakubov, D. Terekhov, P. Lazarenko, S. Kozyukhin. J. Phys. D: Appl. Phys., 58, 305104 (2025)
  93. D. Ielmini, A.L. Lacaita, D. Mantegazza. IEEE Trans. Electron Dev., 54, 308--315 (2007)
  94. A. Pirovano, A.L. Lacaita, A. Benvenuti, F. Pellizzer, R. Bez. IEEE Trans. Electron Dev., 51, 714 (2004)
  95. I.V. Karpov, M. Mitra, D. Kau, G. Spadini, Y.A. Kryukov,V.G. Karpov. J. Appl. Phys., 102, 124503 (2007)
  96. M. Mitra, Y. Jung, D.S. Gianola, R. Agarwal. Appl. Phys. Lett., 96, 222111 (2010)
  97. M.L. Gallo, D. Krebs, F. Zipoli, M. Salinga, A. Sebastian. Adv. Electron. Mater., 4 (9), 1700627 (2018)
  98. X. Wang, R. Wang, S. Sun, D. Xu, C. Nie, Z. Zhou, C. Wen, J. Zhang, R. Chu, X. Shen, W. Zhou, Z. Song, J.-J. Wang, E. Ma, W. Zhang. Nature Mater. (2025). DOI: 10.1038/s41563-025-02361-0
  99. A.I. Musorin, A.S. Shorokhov, A.A. Chezhegov, T.G. Baluyan, K.R. Safronov, A.V. Chetvertukhin, A.A. Grunin, A.A. Fedyanin. UFN, 193, 1284 (2023). (in Russian)
  100. C. Lian, Ch. Vagionas, Th. Alexoudi, N. Pleros, N. Youngblood, C. Ri os. Nanophotonics, 11 (17), 3823 (2022)
  101. W.H.P. Pernice, H. Bhaskaran. Appl. Phys. Lett., 101, 171101 (2012)
  102. T. Li, Y. Li, Y. Wang, Y. Liu, Y. Liu, Z. Wang, R. Miao, D. Han, Z. Hui, W. Li. Nanomaterials, 13, 1756 (2023)
  103. X. Chen, Y. Xue, Y. Sun, J. Shen, S. Song, M. Zhu, Z. Song, Z. Cheng, P. Zhou. Adv. Mater., 35, 2203909 (2023)
  104. Z. Cheng, C. Ri os, W.H.P. Pernice, C.D. Wright, H. Bhaskaran. Sci. Adv., 3, e1700160 (2017)
  105. X. Chen, Y. Xue, Y. Sun, J. Shen, S. Song, M. Zhu, Z. Song, Z. Cheng, P. Zhou. Adv. Mater., 35 (37), 2203909 (2023)
  106. P. Lazarenko, V. Kovalyuk, P. An, A. Prokhodtsov, A. Golikov, A. Sherchenkov, S. Kozyukhin, I. Fradkin, G. Chulkova, G. Goltsman. APL Mater., 9 (12), 121104 (2021)
  107. R. Sawant, A. Albanese, A. Rogemont, G. Gonzalez-Cortes, Y. Br\^le, L. Karam, J.-B. Jager, S. Malhouitre, B. Charbonnier, A. Coillet, P. Noe, B. Cluzel. Adv. Optical Mater., 13, e00775 (2025)
  108. Y. Fei, Y. Xu, Y. Dong, B. Zhang, Y. Ni. Appl. Optics, 62 (24), 6499 (2023)
  109. V.V. Ionin, A.V. Kiselev, A.A. Burtsev, V.A. Mikhalevsky, N.N. Eliseev, I.M. Asharchuk, V.I. Sokolov, A.A. Lotin. Appl. Phys. Lett., 119 (8), 081105 (2021)
  110. M. Stegmaier, C. Ri os, H. Bhaskaran, W.H.P. Pernice. ACS Photonics, 3 (5), 828(2016)
  111. W. Zhou, N. Farmakidis, J. Feldmann, X. Li, J. Tan, Y. He, C.D. Wright, W.H.P. Pernice, H. Bhaskaran. MRS Bulletin, 47, 502 (2022)
  112. M. Stegmaier, C. Ri os, H. Bhaskaran, C.D. Wright, W.H.P. Pernice. Adv. Opt. Mater., 5, 1600346 (2017)
  113. P. Lazarenko, V. Kovalyuk, P. An, S. Kozyukhin, V. Takats, A. Golikov, V. Glukhenkaya, Y. Vorobyov, T. Kulevoy, A. Prokhodtsov, A. Sherchenkov, G. Goltsman. Acta Mater., 234, 117994 (2022)
  114. S.A. Kozyukhin, P.I. Lazarenko, A.I. Popov, I.L. Eremenko. Russian Chem. Rev., 91, 9 (2022)
  115. N. Bala, B. Khan, K. Singh, P. Singh, A.P. Singh, A. Thakur. Mater. Adv., 4, 747 (2023)
  116. M. Delaney, I. Zeimpekis, D. Lawson, D.W. Hewak, O.L. Muskens. Adv. Funct. Mater., 30 (36), e2002447 (2020)
  117. X.B. Li, N.K. Chen, X.P. Wang, H.B. Sun. Adv. Funct. Mater., 28 (44), 1803380 (2018)
  118. P. Lazarenko, V. Kovalyuk, P. An, A. Prokhodtsov, A. Golikov, A. Sherchenkov, S. Kozyukhin, I. Fradkin, G. Chulkova, G. Goltsman. APL Mater., 9, 121104 (2021)
  119. E. Menshikov, P. Lazarenko, V. Kovalyuk, S. Dubkov, N. Maslova, A. Prokhodtsov, A. Vorobyov, S. Kozyukhin, G. Goltsman, I.S. Sinev. ACS Appl. Mater. Interfaces, 16 (29), 38345 (2024)
  120. M. Wuttig, H. Bhaskaran, T. Taubner. Nature Photonics, 126, 465 (2017)
  121. S. Wen, X. Meng, M. Jiang, Y. Wang. Sci. Rep., 8 (1), 1 (2018)
  122. A.A. Gavdush, G.A. Komandin, V.V. Bukin, D.S. Ponomarev, L. Tan, W. Huang, Q. Shi. J. Appl. Phys., 134, 085103 (2023)
  123. J. Faneca, T.D. Bucio, F.Y. Gardes, A. Baldycheva. Appl. Phys. Lett., 116 (9) (2020)
  124. S. Seliverstov, S. Svyatodukh, A. Kozhukhovsky, D. Fudin, P. Lazarenko, D. Terekhov, A. Prokhodtsov, A. Nevzorov, E. Kitsyuk, A. Prikhodko, A. Shurakov, V. Kovalyuk, G. Goltsman. Optical Mater., 167, 117216 (2025)
  125. I. Chakraborty, G. Saha, K. Roy. Phys. Rev. Appl., 11, 014063 (2019)
  126. Z. Cheng, C. Ri os, W.H.P. Perniceet, C.D. Wright, H. Bhaskaran. Sci. Adv., 3 (9), e1700160 (2017)
  127. J. Feldmann, N. Youngblood, D. Wright, H. Bhaskaran, W.H.P. Pernice. Nature, 569, 208 (2019)
  128. J. Feldmann, N. Youngbloo, M. Karpov, H. Gehring, X. Li, M. Stappers, M. Le Gallo, X. Fu, A. Lukashchuk, A.S. Raja, J. Liu, C.D. Wright, A. Sebastian, T.J. Kippenberg, W.H.P. Pernice, H. Bhaskaran. Nature, 589, 52 (2021)
  129. N. Farmakidis, B. Dong, H. Bhaskaran. Nature Rev. Electr. Eng., 1, 358 (2024)
  130. D.V. Christensen, R. Dittmann, B. Linares-Barranco, A. Sebastian, M. Le Gallo, A. Redaelli, S. Slesazeck, T. Mikolajick, S. Spiga, S. Menzel, I. Valov, G. Milano, C. Ricciardi, S.-J. Liang, F. Miao et al. Neuromorph. Comput. Eng., 2 (2), 022501 (2022)
  131. P. Prabhathan, K.K.V. Sreekanth, J. Teng, J.H. Ko, Y.J. Yoo, H.-H. Jeang, Y. Lee, S. Zhang, T. Cao, C.-C. Popescu, B. Mills, T. Gu, Z.R. Chen, Y. Tong, Y. Wang, Q. He, Y. Lu, Z. Liu, H. Yu, A. Mandal, Y. Cui et al. iScience, 26 (10), 107946 (2023)
  132. M. Xu, X. Mai, J. Lin, W. Zhang, Y. Li, Y. He, H. Tong, X. Hou, P. Zhou, X. Miao. Adv. Funct. Mater., 30, 2003419 (2020)
  133. L. Wang, S.R. Lu, J. Wen. Nanoscale Res. Lett., 12, 347 (2017)
  134. S.A. Kozyukhin, P.I. Lazarenko, A.I. Popov, I.L. Eremenko. Russian Chem. Rev., 91, 9 (2022)
  135. C. Li, R. Pan, C. Gu, H. Guo, J. Li. Adv. Sci., 11, 2306344 (2024)
  136. G.S. Sarwat, M. Le Gallo, A. Sebastian. Chem. Rev., 125, 5163 (2025)
  137. B. Gholipour, A. Karvounis, J. Yin, C. Soci, K.F. MacDonald, N.I. Zheludev. NPG Asia Materials, 10, 533 (2018)
  138. Y. Meng, T. Cao, Y. Long. J. Appl. Phys., 128, 140904 (2020)
  139. C. Galarreta, I. Sinev, A.M. Alexeev, P. Trofimov, K. Ladutenko, S. Carrillo, E. Gemo, A. Baldycheva, J. Bertolotti, C.D. Wright. Optica, 7 (5), 476 (2020)
  140. C.R. De Galarreta, A.M. Alexeev, Y.-Y. Au, M. Lopez-Garcia, M. Klemm, M. Cryan. Adv. Funct. Mater., 28 (10), 1704993 (2018). DOI: 10.1002/adfm.201704993
  141. A.V. Pogrebnyakov, J.A. Bossard, J.P. Turpin, J.D. Musgraves, H.J. Shin, C. Rivero-Baleine et al. Opt. Mater. Express, 8 (8), 2264 (2018). DOI: 10.1364/OME.8.002264
  142. Cao, C. Wei, R.E. Simpson, L. Zhang, M.J. Cryan. Sci. Rep., 4, 3955 (2014). DOI: 10.1038/srep03955
  143. A.I. Solomonov, O.M. Kushchenko, K.I. Kasyanova, S.B. Isaeva, I.I. Shishkin, D.Y. Terekhov, P.I. Lazarenko, M.V. Rybin, S.S. Baturin, A.D. Sinelnik. Appl. Mater. Today, 37, 102135 (2024)
  144. T. Kunkel, Y. Vorobyov, M. Smayev, P. Lazarenko, A. Romashkin, S. Kozyukhin. Mater. Sci. Semicond. Proc., 139, 106350 (2022)
  145. A. Sajjad, O. Hemmatyar, M. Taghinejad, H. Taghinejad, A. Krasnok, A.A. Eftekhar, C. Teichrib, S. Deshmukh, M.A. El-Sayed, E. Pop, M. Wuttig, A. Al\`u, W. Cai, A. Adibi. Nature Commun., 13, 1696 (2022)
  146. W. Dong, H. Liu, J.K. Behera, L. Lu, R.J. Ng, K.V. Sreekanth, X. Zhou, J.K. Yang, R.E. Simpson. Adv. Funct. Mater., 29, 1806181 (2019)
  147. Z. Yu, J. Zheng, P. Xu, W. Zhang, Y. Wu. IEEE Phot.Technol. Lett., 30, 250 (2017)
  148. M. Singh, S.K. Raghuwanshi, T. Srinivas. Phys. Lett. A, 383, 3196 (2019)
  149. Z. Guo, X. Yang, F. Shen, Q. Zhou, J. Gao, K. Guo. Sci. Rep., 8, 1 (2018)
  150. Y. Wang, P. Landreman, D. Schoen, K. Okabe, A. Marshall, U. Celano, H.-S.P. Wong, J. Park, M.L. Brongersma. Nature Nanotechnol., 16, 667 (2021)
  151. Y. Li, J. Luo, X. Li, M. Pu, X. Ma, X. Xie, J. Shi, X. Luo. IEEE Photonics J., 12, 1 (2020)
  152. C.Y. Hwang, G.H. Kim, J.H. Yang, C.S. Hwang, S.M. Cho, W.J. Lee, J.E. Pi, J.H. Choi, K. Choi, H.O. Kim et al. Nanoscale, 10, 21648 (2018)
  153. Y. Qu, Q. Li, L. Cai, M. Pan, P. Ghosh, K. Du, M. Qiu. Light: Sci. Appl., 7, 26 (2018).
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