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Multiphonon electron capture on mercury vacancy states in "wide-bandgap" layers of HgCdTe
Bekin N. A.
1, Kozlov D. V.
1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: nbekin@ipmras.ru
Using the adiabatic approximation, the capture coefficient of conduction band electrons on A2-2 mercury vacancy levels in HgCdTe semiconductors with a band gap of more than ~100 meV (with a Cd fraction in the solution x>0.2) was estimated. It is shown that electron capture on the vacancies is significantly suppressed with an increase in the cadmium content. For example, the low-temperature capture coefficient decreases from ~ 10-8 cm3·s-1 at x=0.21 to ~10-12 cm3·s-1 at x=0.25. The low rate of electron capture in wide-bandgap HgCdTe layers is mainly due to the significant distance of mercury vacancy levels from the bottom of the conduction band, as well as the moderately weak electron-phonon coupling of electrons localized in vacancies (Huang-Rhys factor S<0.5). Keywords: deep defects, mercury vacancies, HgCdTe, multiphonon electron capture, adiabatic approximation.
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