Nikolaev V. I.1,2, Polyakov A. Y.3, Shapenkov S. V.1, Stepanov A. I.1, Timashov R. B.1, Krymov V. M.1, Shchemerov I. V.3, Matros N. R.3, Vasilev A.A.3, Alexanyan L. A.3, Chernykh A. V. 3
1Ioffe Institute, St. Petersburg, Russia
2Perfect Crystals LLC, Saint-Petersburg, Russia
3National University of Science and Technology MISiS, Moscow, Russia
Email: seva.shapenkov@yandex.ru
Electrical properties of Cr2O3 layers with improved p-type conductivity by doping them with magnesium (0.1 wt.% to 5 wt.%) in the process of mist CVD epitaxy on sapphire substrates and single crystals of bulk gallium oxide (β-Ga2O3) with n-type conductivity are studied. In the capacitance-voltage characteristics of heterojunctions, the concentration of Nd donors (1.2·1017 cm-3) is observed. In the admittance spectra, clearly distinguishable peaks are observed corresponding to states with energies of 0.15 eV, 0.19 eV, 0.32 eV, 0.62 eV. They are associated with the recombination of electrons from β-Ga2O3 with holes in the p-layer, with the need to overcome a large band gap in the conduction band of the heterointerface, and with the formation of interface states in the β-Ga2O3 layer. Keywords: p-n-heterojunction, gallium oxide, chromium oxide, electrophysics.
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