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Mechanism of charge transport in ITO/[GeOx](z)[SiO2](1-z)/n+-Si MIS structures
Russian version
Yushkov I.D. 1,2, Gismatulin A.A.1, Kamaev G.N. 1, Vergnat M.3, Volodin V.A.1,2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
3Universite de Lorraine, Nancy, France
Email: ivanjushkov@gmail.com
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The mechanism of charge transport in metal-insulator-semiconductor (MIS) ITO/[GeOx](z)[SiO2](1-z) (0.25≤ z≤1)/n+-Si structures with germanosilicate glass films fabricated by electron beam evaporation of germanium oxide and silicon oxide powders in vacuum are studied. The ITO top contact was deposited on the surface of the dielectric layer by magnetron sputtering. By IR spectroscopy, Ge-O, Si-O and Ge-O-Si bonds are observed in the films [GeOx](z)[SiO2](1-z) (0.25≤ z≤0.75). The experimental current-voltage characteristics measured at different temperatures are approximated using both contact-limited and bulk-limited models of charge transport in the dielectric. It is shown that the conduction mechanism is most adequately described by the model of space charge space-limited current. The parameters of traps in the dielectric are determined within this model. Keywords: MIS structure, Charge transport, Infrared spectroscopy.
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