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Characterization of AlGaN/GaN high frequency transistors with field-plate electrode on a silicon substrate
Zhuravlev M. N.
1, Zemlyakov V. E.
1, Guminov N. V.1, Zaitsev A. A.
1, Shpakov D. S.1, Makartsev I. V.1, Dudinov K. V.
2, Egorkin V. I.
1
1National Research University of Electronic Technology, Zelenograd, Moscow, Russia
2JSC ”RPC ”Istok“ named after Shokin, 141190 Moscow region, Fryazino, Russia
2JSC ”RPC ”Istok“ named after Shokin, 141190 Moscow region, Fryazino, Russia
Email: maxim@org.miet.ru
The electrical breakdown and microwave characteristics of AlGaN/GaN transistors with different field-plate electrodes, electrically connected to the source via a common bus, were studied. It was shown that adding field-effect electrodes increases the breakdown voltage, increases the gain by more than 2 dB in the frequency range up to 15 GHz. Keywords: field plate, gallium nitride, GaN, power RF HEMT, breakdown voltage, maximum stable gain (MSG).
- J.R. Kumar, H.V. Du John, I.V.K. Jebalin, J. Ajayan, A. Delighta, D. Nirmal. Microelectronics J., 140, 105951 (2023)
- Y.-F. Wu, A. Saxler, M. Moore, R.P. Smith, S. Sheppard, P.M. Chavarkar, T. Wisleder, U.K. Mishra, P. Parikh. IEEE Electron Dev. Lett., 25 (3), 117 (2004)
- S. Karmalkar; U.K. Mishra. IEEE Trans. Electron Dev., 48 (8), 1515 (2001)
- C. Dundar, D. Kara, N. Donmezer. IEEE Trans. Electron Dev., 67 (1), 57 (2020)
- V. Kumar, G. Chen, S. Guo, I. Adesida. IEEE Trans. Electron Dev., 53 (6), 1477 (2006)
- M.N. Zhuravlev, V.I. Egorkin. Semiconductors, 58 (5), 479 (2024)
- J.L. Lyons, A. Janotti, C.G. Van de Walle. Appl. Phys. Lett., 97, 152108 (2010)
- T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita, J. Suda. J. Appl. Phys., 129, 185702 (2021)
- S.M. Sze, Y. Li, K.K. Ng. Physics of semiconductor devices., 4Rd Ed (John Wiley \& Sons, Inc., 2021)
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Дата начала обработки статистических данных - 27 января 2016 г.