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Study of growth and electrical conductivity of ultrathin magnesium films on bismuth-passivated Si(111) surface
Russian version
Tsukanov D. A. 1,2, Azatyan S. G. 1, Denisov N. V. 1, Ryzhkova M. V. 1
1Institute of Automatic Control Process, Far-Eastern Branch of Russian Academy of Sciences, 690041 Vladivostok, Russia
2Far Eastern Federal University, Vladivostok, Russia
Email: tsukanov@iacp.dvo.ru, sergei@iacp.dvo.ru, denisov@mail.dvo.ru, lavric@iacp.dvo.ru
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The results of the study of the crystal structure, morphology and electrical resistance of Si(111) substrates after magnesium deposition on pre-formed surface reconstructions of Si(111)3x3-Bi are presented. Low-energy electron diffraction and scanning tunneling microscopy were used to study changes in the crystal lattice structure and surface morphology, and the four-probe method was used to measure the electrical resistance of the substrates in situ. The effect of the concentration of adsorbed magnesium atoms on the structural and electrical properties of the films is considered. The role of surface reconstructions as a buffer layer for subsequent growth of ultrathin magnesium films is shown. Keywords: adsorption, surface reconstruction, electrical resistance, low-energy electron diffraction, four-point probe method.
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