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Pulse Power Boost Converter on Gallium Nitride Transistors
Shershunova E. A.
1, Moshkunov S.I.
1, Khomich V. Yu.
1, Igolkin A. A.
2
1Institute for Electrophysics and Electric Power, Russian Academy of Sciences, St. Petersburg, Russia
2Samara National Research University, Samara, Russia
2Samara National Research University, Samara, Russia
Email: eshershunova@ieeras.ru, serg-moshkunov@yandex.ru, khomich@ras.ru, igolkin.aa@ssau.ru
A module of a pulse power boost DC/DC voltage converter with an output voltage of 130 V, a power of 3 kW and an operating frequency of 100 kHz on field-effect transistors based on gallium nitride has been developed and successfully tested. The power loss calculation on the elements of the power converter has been performed. The main mechanism of losses due to the heating of the crystal in the conduction state was revealed. The efficiency of the converter operating at maximum power was experimentally obtained to be 98.5 %, which coincided well with the calculation. Keywords: voltage converter, aircraft, gallium nitride transistors, power losses.
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