Self-catalytic growth of GaInP nanostructures on silicon substrates from vapor phase: choice of source composition and catalytic droplets
Karlina L.B.1, Vlasov A.S.
1, Levin R. V.1, Soshnikov I.P.1,2,3
1Ioffe Institute, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
3Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
Email: karlin@mail.ioffe.ru
The article presents studies of self-catalytic growth of GaInP nanostructures on (111) oriented silicon substrates from saturated vapors of phosphorus and indium in a quasi-closed volume, aimed at studying the methods for controlling the composition of the obtained structures. Studies of vibrational properties and photoluminescence spectra have shown that choosing the optimal combination of source and catalytic droplet compositions makes it possible to obtain GaInP nanostructures emitting in the range from 1.37 to 1.9 eV. Differences in the morphology of the obtained nanostructures depending on the conditions of their formation have been established. Keywords: GaInP nanostructures, self-catalytic growth from vapor phase, AIIIBV on Si.
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