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β<=> β' phase transition with temperature hysteresis in In2Se3 films
Ponomarev S. A.
1,2, Kurus N. N.1, Golyashov V. A.1, Mironov A. Y.1, Rogilo D. I.1, Milekhin A. G.1, Sheglov D. V.1, Latyshev A. V.1,2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
Email: ponomarev@isp.nsc.ru
The temperature dependences of Raman scattering for In2Se3 films were measured during cooling to the liquid nitrogen temperature and subsequent heating to the room temperature. The Raman spectra show a reversible β-In2Se_3<=>β'-In2Se3 phase transition with hysteresis in the range of 140-180 K previously discovered by a change in the atomic structure of the surface and the sharp decrease in electrical resistance by a factor of 104 during the cooling. The ARPES measurements display changes in film's band structure corresponding to this phase transition. Keywords: phase transition, In2Se3, hysteresis, ARPES, resistance, Raman scattering.
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