Electronic structure of Janus layers based on Ti1-yCry(Se1-xS_x)2
Beliaev D. V.1, Kovalenko Yu. E.1, Titov A. A.1, Golyashov V. A.2,3, Tereshchenko O. E.2,3, Chumakov R. G.4, Titov A. N.1, Kuznetsova T. V.1,5
1M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
3Synchrotron Radiation Facility - Siberian Circular Photon Source "SKlF" Boreskov Institute of Catalysis of Siberian Branch of the Russian Academy of Sciences, Koltsovo, Russia
4National Research Center “Kurchatov Institute”, Moscow, Russia
5Ural Federal University after the first President of Russia B.N. Yeltsin, Yekaterinburg, Russia
Email: danil.belyaev08@gmail.com

PDF
Single crystals Ti0.9Cr0.1(Se0.8S0.2)2 and Ti0.85Cr0.15(Se0.8S0.2)2 were synthesized for the first time by gas-transport reactions. The structural and phase purity of the obtained single crystals was investigated by X-ray powder diffraction. The chemical composition of the synthesized samples was determined by energy dispersive X-ray spectroscopy on a scanning electron microscope. The electronic structure was studied by ARPES method. With increasing Cr concentration, a decrease in conduction band filling and a decrease in hole mass is observed. The absence of dispersion-free band is also observed, which indicates the absence of metal intercalation into the interlayer space. Keywords: janus structures, angle-resolved photoemission spectroscopy, transition metal dichalcogenides.
  1. S. Manzeli, D. Ovchinnikov, D. Pasquier, O.V. Yazyev, A. Kis. Nature Rev. Mater., 2, 1 (2017)
  2. W. Shi, J. Ye, Y. Zhang, R. Suzuki, M. Yoshida, J. Miyazaki, N. Inoue, Y. Saito, Y. Iwasa. Sci. Rep., 5, 12534 (2015)
  3. P. Chen, Y.-H. Chan, X.-Y. Fang, Y. Zhang, M.Y. Chou, S.-K. Mo, Z. Hussain, A.-V. Fedorov, T.-C. Chiang. Nature Commun., 6, 8943 (2015)
  4. M.K. Hooda, C.S. Yadav, D. Samal. J. Phys.: Condens. Matter, 33, 103001 (2020)
  5. J. Yu, C.-H. Lee, D. Bouilly, M. Han, P. Kim, M.L. Steigerwald, X. Roy, C. Nuckolls, Nano Lett., 16, 3385 (2016)
  6. S. Fan, X. Zou, H. Du, L. Gan, C. Xu, W. Lv, Y.-B. He, Q.-H. Yang, F. Kang, J. Li. J. Phys. Chem. C, 121, 13599 (2017)
  7. K. Zhang, X. Fang, Y. Wang, Y. Wan, Q. Song, W. Zhai, Y. Li, G. Ran, Y. Ye, L. Dai. ACS Appl. Mater. Interfaces, 9, 5392 (2017)
  8. N. Sirica, S.-K. Mo, F. Bondino, I. Pis, S. Nappini, P. Vilmercati, J. Yi, Z. Gai, P.C. Snijders, P.K. Das, I. Vobornik, N. Ghimire, M.R. Koehler, L. Li, D. Sapkota, D.S. Parker, D.G. Mandrus, N. Mannella. Phys. Rev. B, 94, 075141 (2016)
  9. A.S. Shkvarin, Y.M. Yarmoshenko, A.I. Merentsov, E.G. Shkvarina, A.F. Gubkin, I. Ps, S. Nappini, F. Bondino, I.A. Bobrikov, A.N. Titov. Inorg. Chem., 59, 8543 (2020)
  10. A.N. Titov, A.I. Merentsov, V.N. Neverov. Phys. Solid State, 48, 1472 (2006)
  11. J.M. Tarascon, F.J. DiSalvo, M. Eibschutz, D.W. Murphy, J.V. Waszczak. Phys. Rev. B, 28, 6397 (1983)
  12. A. Kandemir, H. Sahin. Phys. Rev. B, 97, 155410 (2018)
  13. J. Zhang, S. Jia, I. Kholmanov, L. Dong, D. Er, W. Chen, H. Guo, Z. Jin, V.B. Shenoy, L. Shi, J. Lou. ACS Nano, 11, 8192 (2017)
  14. D.B. Trivedi, G. Turgut, Y. Qin, M.Y. Sayyad, D. Hajra, M. Howell, L. Liu, S. Yang, N.H. Patoary, H. Li, M.M. Petric, M. Meyer, M. Kremser, M. Barbone, G. Soavi, A.V. Stier, K. Muller, S. Yang, I.S. Esqueda, H. Zhuang, J.J. Finley, S. Tongay. Adv. Mater., 32, 2006320 (2020)
  15. R. Nitsche. Fortschr. Miner., 44, 231 (1967)
  16. M.-L. Mottas, T. Jaouen, B. Hildebrand, M. Rumo, F. Vanini, E. Razzoli, E. Giannini, C. Barreteau, D.R. Bowler, C. Monney, H. Beck, P. Aebi. Phys. Rev. B, 99, 155103 (2019)
  17. A.N. Titov, A.S. Shkvarin, A.I. Merentsov, O.V. Bushkova, E.A. Suslov, A.A. Titov, J. Avila, M.C. Asensio, N.V. Kazantseva, M.S. Postnikov. Chem. Mater., 33, 8915 (2021)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru