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Study of the structural and optical properties of InGaAs quantum dots
Russian version
Babichev A.V.1, Nadtochiy A.M.1,2, Blokhin S. A.1, Nevedomsky V. N.1, Kryzhanovskaya N. V.2, Bobrov M. A.1, Vasil'iev A. P.1, Maleev N. A.1, Karachinsky L. Ya.3, Novikov I. I.3, Egorov A. Yu.3
1Ioffe Institute, St. Petersburg, Russia
2HSE University, St. Petersburg, Russia
3ITMO University, St. Petersburg, Russia
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The growth parameters of InxGa1-xAs quantum dots grown by molecular-beam epitaxy were tested. It has been shown that a decrease in the indium content in quantum dots structures yields to a decrease in the ground state emission wavelength, with subsequent saturation of the behavior. The use of In0.5Ga0.5As quantum dots makes it possible to realize effective photoluminescence close to 995 nm at 13 K temperature, with emission inhomogeneous broadening of about 57 meV with unimodal size distribution. The high luminescence efficiency for structures with In0.5Ga0.5As quantum dots at 300 K temperature has been demonstrated, which makes it possible to use this type of active regions for the fabrication of vertical microcavities to further realize reservoir computing. Keywords: molecular-beam epitaxy, gallium arsenide, InGaAs, Stranski-Krastanov mode.
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