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The influence of external parameters on the switching process by delayed ionization in a silicon p+-n-n+-structure
Russian version
Kardo-Sysoev A. F.1, Cherenev M. N.1,2, Lyublinsky A. G.1, Smirnova I. A.1, Yusupova S. A.1, Belyakova E. I.1, Vexler M. I.1
1Ioffe Institute, St. Petersburg, Russia
2
Email: mncherenev@mail.ioffe.ru
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The new developed technique allows measuring fast-switching processes in semiconductor diodes, which are switched into a conducting state by applying a high-voltage fast-rising pulse together with a high DC voltage. Using this technique, delayed impact ionization was studied in structures with n-base thicknesses of about 100 μm and 410 μm. It has been experimentally demonstrated that for structures with a thick base, the switching characteristics improve with an increase in both the DC reverse bias and the rise rate of the applied voltage pulse. A voltage rise rate of 42.7 kV/ns has been achieved for a single structure. Keywords: Silicon Avalanche Shaper (SAS), delayed impact ionization, sub-nanosecond voltage pulses, power diodes.
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