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Formation of self-assembled quantum dots during GaSbP deposition on AlP surface
Russian version
Abramkin D.S.1,2, Petrushkov M.O.1, Bogomolov D.B.1, Emelyanov E. A.1, Putyato M. A.1, Preobrazhenskii V. V.1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
Email: dalamber.07@mail.ru
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Formation process of the self-assembled GaSbP quantum dots (QDs) on the AlP(100) surface from flows of Sb4, P2 and Ga atoms was investigated by reflection high-energy electron diffraction technique. The dependences of the QDs nucleation critical thickness (Deff), the elastic deformations in QDs and the composition of the GaSbP alloy of QDs, on the substrate temperature (TS) and the pressure ratio in the flows of Sb4 and P2 molecules (P(Sb_4):P(P_2)) was studied. It was found that in wide ranges of TS and P(Sb_4):P(P_2) values (380-460oC and 0.07-27 accordingly), unstrained GaSbP/AlP quantum dots are formed. Keywords: quantum dots, molecular beam epitaxy, solid alloy, plastic strain relaxation.
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